The emissivity of a silicon wafer during the growth of thin oxide films was studied from the viewpoint of spectral, directional, and polarization characteristics of thermal radiation. Experimental results were mostly coincident with simulated results. By using a simulation model to estimate the optical properties of silicon wafers, a direct relationship was found between the ratio of p- to s-polarized radiance and the polarized emissivity under specific conditions. This relationship was experimentally confirmed at high temperatures (>900 K). On the basis of these results, the present study proposes a new radiation thermometry technique that can measure the temperature and spectral polarized emissivity of a silicon wafer at a wavelength of 0.9 µm and at moderately high temperatures, irrespective of the variation in emissivity with oxide film thickness.
Silicon wafers become semitransparent at room temperature and at wavelengths more than 1.1 μm. Silicon wafers with an oxide film layer are also semi-transparent because the extinction coefficient of the film optical constants is negligible at visible and infrared wavelengths. We experimentally studied optical properties such as emissivity, reflectivity and transmissivity of silicon wafers with and without oxide films to devise new radiation thermometry that is applicable to semi-transparent silicon wafers near room temperature. The proposed radiation thermometry which is constituted from two blackbodies and p-polarized optical components showed the accuracy of ± 1 K at the temperature range from 313 K to 343 K using a radiometer with an InSb sensor sensitive at a wavelength of 4.7 ± 0.1 μm for silicon wafers with low resistivity. It turned out that radiation thermometry near room temperature for silicon wafers with resistivity over 1 Ωcm is very difficult because their emissivities are extremely small.
Emissivity and transmissivity of a silicon wafer were studied during the growth of thin oxide films from the viewpoint of spectral, directional and polarized characteristics of thermal radiation. Experimental results were mostly coincident with simulated results. By using a simulation model to estimate the optical properties of silicon wafers, a direct relationship was found between the ratio of p- to s-polarized radiance and the polarized emissivity under specific conditions. This relationship was experimentally confirmed at high temperatures (> 900 K). On the basis of these results, the present study proposes a new radiation thermometry technique that can measure the temperature and spectral emissivity of a silicon wafer at a wavelength of 0.9 μm and at moderately high temperatures, irrespective of the variation in emissivity with oxide film thickness.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.