Efficient generation of entanglement between a stationary matter-qubit and a propagating photonic-qubit is a scientific and technological challenge of utmost importance for the realisation of fully-fledged quantum networks. Solid-state quantum emitters in the telecom C-band are a promising platform due to the minimal absorption of photons at these wavelengths and deterministic generation of high purity single photon flying qubits. Here, we use an InAs/InP quantum dot to implement an optically active spin-qubit and demonstrate high fidelity spin initialisation and coherent spin control of the resident electron. Lastly, for the first time we demonstrate high-fidelity spin-photon entanglement in a solid-state system with direct emission into the telecom C-band and obtain a lower bound on the entanglement fidelity of 80.07 %.
Semiconductor quantum dots can generate single indistinguishable photons at telecom wavelengths for quantum networking applications. Integrating quantum dots into polarized microcavities is highly beneficial for advanced functionalities. In this work, we couple a quantum dot emitting in the telecom ‘O’ band to an elliptical bullseye resonator, demonstrating broadband polarization-selective enhancement and linearly polarized single-photon emission.
The ability of individual photonic qubits to interact via interference lies at the heart of many quantum networking applications. For their development, sources of highly coherent, indistinguishable photons are therefore crucial. Here, we investigate the noise sources that affect InAs/InP quantum dots and limit their coherence. We show that the droplet epitaxy growth mode leads to a quiet environment with 96% of exciton transitions having a coherence time above 100 ps, even under non-resonant excitation. Further, Hong–Ou–Mandel interference reveal a corrected two-photon interference visibility of 98.6±1.6% for these quantum dots, showing their potential for quantum networking applications.
Semiconductor quantum dots are prime candidates for quantum network applications such as quantum relays, but their typical emission wavelength, polarization qubit encoding scheme and low operating frequency are incompatible with existing technologies. Our work shows that InAs/InP quantum dots driven with GHz-clocked pulses, in combination with qubit transcoding interferometers, can bridge these gaps. The demonstrated teleportation of time-bin qubits in the telecom C band even when repetition rates exceed the inverse lifetime of the dot shows the potential for integrating such devices with long-distance quantum network technologies.
Quantum communication networks are formed of secure links, where information can be transmitted with security guaranteed by the quantum nature of light. An essential building block of such a network is a source of single photons and entangled photon pairs, compatible with the low-loss fibre telecom window around 1550 nm. Previous work based on semiconductor quantum dots (QDs), colour centres in diamond and single atoms has been limited by emission wavelengths unsuitable for long distance applications. Efforts have been made to use standard gallium arsenide based QDs by extending their operating wavelength range, however, electrically driven quantum light emission from quantum dots in this telecommunication window has not yet been demonstrated.
In this work, indium phosphide based QD devices have been developed to address this problem. The industry favoured growth method, metalorganic vapour phase epitaxy (MOVPE), has been used to create droplet QDs with low fine structure splitting (FSS). This growth scheme allows us to produce the first optoelectronic devices for single and entangled photon emission in the 1550 nm telecom window. We show single-photon emission with multi-photon events suppressed to 0.11±0.02. Furthermore, we obtain entangled light from the biexciton cascade with a maximum fidelity of 0.87± 0.04 which is sufficient for error correction protocols. We also show extended device operating temperature up to 93 K, allowing operation with liquid nitrogen or simple closed-cycle coolers. Our device can be directly integrated with existing long distance quantum communication, cryptography and quantum relay systems providing a new platform for developing quantum networks.
Quantum dots based on InAs/InP hold the promise to deliver entangled photons with wavelength suitable for the standard telecom window around 1550 nm, which makes them predestined to be used in future quantum networks applications based on existing fiber optics infrastructure. A prerequisite for the generation of such entangled photons is a small fine structure splitting (FSS) in the quantum dot excitonic eigenstates, as well as the ability to integrate the dot into photonic structures to enhance and direct its emission. Using optical spectroscopy, we show that a growth strategy based on droplet epitaxy can simultaneously address both issues.
Contrary to the standard Stranski-Krastanow technique, droplet epitaxy dots do not rely on material strains during growth, which results in a drastic improvement in dot symmetry. As a consequence, the average exciton FSS is reduced by more than a factor 4, which in fact makes all the difference between easily finding a dot with the required FSS and not finding one at all. Furthermore, we demonstrate that droplet epitaxy dots can be grown on the necessary surface (001) for high quality optical microcavities, which increases dot emission count rates by more than a factor of five. Together, these properties make droplet epitaxy quantum dots readily suitable for the generation of entangled photons at telecom wavelengths.
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