Metal halide perovskites are promising alternatives to organic semiconductors and metal oxides for printed electronic applications. Their facile processability allows them to be fabricated through a wide variety of techniques. However there are multiple challenges that halide perovskite transistors need to manage before they are strong contenders. The primary problem associated with halide perovskites are the ionic migration effects which limit room temperature operation. TFT operation at room temperature is primarily achieved via precise compositional, microstructural control or via surface/substrate/electrode treatments. Here, tin doped indium oxide is utilized as source/drain contacts to fabricate a room temperature operational n-type solution-processed Cs(MAFA)Pb(BrI) transistor. Moreover we demonstrate optical learning in these TFTs by exploiting the photoactive nature and gate bias effects of this transistor.
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