In0.82Ga0.18As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP substrates
with two-step growth technique. Three groups sample with different buffer growth conditions were analyzed by Raman
scattering. The intensity of GaAs-like LO phonon of Raman scattering, the frequency shift of the GaAs-like LO phonon
and asymmetry ratio [symbol] of GaAs-like LO phonon of samples were characterized the optical property of In0.82Ga0.18As epilayer, respectively. The results of experiments showed that the optimum buffer In content was 0.82, the optimum
buffer thickness was about 100 nm, and the optimum buffer growth temperature was about 450 °C.
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