This article addresses the evaluation of non-conventional approaches to pattern smaller contacts than those obtained through standard 193nm lithography. The 2002 update of the ITRS Roadmap specifies 100nm and 110nm contacts in resist for DRAMs and ASICs respectively at the 90nm node. The depth of focus (DOF) for small contacts with the current 193nm exposure tools is not adequate and according to Raleigh’s equation, the higher numerical aperture (NA) 193nm exposure tools can be expected to have further decreased DOF. Therefore it is important to investigate the capabilities of process based resolution enhancement techniques to print smaller contacts using the current 193nm exposure tools. This article presents an evaluation of proves based resolution enhancement techniques such as REFLOW, RELACS and SAFIER.
This article presents a general solution to the resist poisoning problem in 248 and 193nm resists integrated with low k dielectrics in VFTL process. This study investigated the interactions of various 248nm and 193nm photoresists with spin-on low-k materials. Two kinds of experiments were conducted: (1) material characterization involving blanket film/s on bare Si wafers, and (2) interactions in the dual-damascene full via-first trench-last (VFTL) stacks. The first study facilitates a fundamental understanding of material interactions. This basic understanding can be then extended to high-resolution patterning. In particular, the VFTL process that involves photoresists, anti-reflective coatings, low-k materials, and hard masks was studied. The effects and interactions of via plasma etch and ash processes on subsequent trench lithography steps was also investigated. This article will present experimental results and strategies to reduce or eliminate photoresist poisoning in the full VFTL process.
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