Sookap Hahn, Walter Smith, Tohru Hara, H. Hagiwara, H. Suzuki, Yeong-Keun Kwon, Kwang-Il Kim, Y.-H. Bae, W. Chung, Charles Yarling, L. Larson, Richard Meinecke
In this study, damage induced by Ar+ and Si+ ion implantation and its annealing behavior during rapid thermal annealing for 10 sec at temperatures between 575-1100°C were investigated by thermal wave modulated optical reflectance, deep level transient spectroscopy, reflection high energy electron diffraction, Rutherford backscattering aligned spectra and transmission electron microscopy. Our data show that (1) thermal wave signal and its variation with repect to rapid thermal anneal temperature strongly depend upon implant dose and anneal temperature; (2) both implant species induce four distinctive deep trap levels; (3) these traps evolve during rapid thermal annealing!; and (4) for the single Si+ ion implanted samples, the variation of total trap concentration with respect to rapid thermal anneal temperatures follows that of TW. However, in the case of Ar+ ion implanted samples, no apparent correlation between thermal wave signal and DLTS trap condition could be made.
Rapid Thermal Processing (RTP) has shown promise as a tool that will reduce the thermal budget presently used in the manufacture of advanced ULSI devices. Because of the rapid rates of temperature rise and fall coupled with inherent system temperature non-uniformities of RiP systems plastic deformation has been identified to occur in RTP- processed wafers. Concern over these types of process-induced defects has brought about the identification of various methods of uniformity characterization of RiP-processed wafers. In this study 150 mm p-type wafers (with no screen oxide) were first implanted on a batch implanter with conditions of 5E15 of arsenic at 80 keY. After implantation the wafers were rapid thermally annealed for 10 seconds at the temperatures ranging from 900 to 1250 C. Each wafer was then measured by several techniques: wafer warpage measurements optical imaging inspection (magic mirror method) X-ray transmission topography and thermal wave modulated-optical reflectance. This presentation summarizes the measured results of wafer defects and damage due to the RTP processing. 1.
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