Optical proximity correction (OPC) is an essential technique for enhancing photolithographic image quality. Its effectiveness and efficiency largely depend on accurate resist modeling. The resist exposure and development processes involve complex nonlinear physicochemical reactions, presenting significant challenges for fast and precise modeling required for OPC. In our work, a Wiener-Padé resist model is proposed. Through various experiments, we validate that the Wiener-Padé model delivers excellent performance in terms of accuracy, generality, and speed. The proposed resist modeling method offers significant potential for advancing photolithography modeling and OPC in contemporary semiconductor manufacturing.
Polarization distortion is a phenomenon which the polarization state of output light deviates from the theoretical expectation. Due to the design defects and process limitations, polarization distortion in beam splitter is inevitable, which results in the significant errors in the optical systems. A theoretical analysis method based on Mueller matrix is proposed for characterizing the beam splitter. In the propose approach, polarization distortion in the beam splitter including depolarization, linear and circular birefringence, and linear diattenuation, circular dichroism have been considered. With the proposed method, we can characterize the beam splitters and extract the related effective optical parameters of polarization distortion. The Mueller matrices of two different commonly used beam splitters measured by a commercial Mueller matrix ellipsometer (MME) are consistently fitted by the proposed method and the residual errors have shown the improvement compared to the conventional methods.
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