Two-dimensional (2D) layered materials have aroused widespread interests due to their remarkable physical characteristics such as strong light-matter interaction and layered-dependent physical properties. Molybdenum disulfide (MoS2), one of the group of transition metal dichalcogenides (TMDCs), has many great applications on photoelectronic devices. Herein, based on high carrier mobility of graphene, a vertical graphene/MoS2 van der Waals heterostructure photodetector was designed and fabricated. With help of gap between graphene and MoS2, the responsibility of our device (7219 A W-1 at 532 nm) is better than that of MoS2 photodetector. As a transistor, on-off ratio of our device can be ~194. The results show the graphene-based heterostructure can provide numerous help for improving the performance of 2D photodetectors and transistor
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