Nano-porous containing photo-sensitive materials can be used in TFT-LCD color filter. It is a critical material in color filter on array(COA) manufacturing. Nano-porous material has high light transmittance, high resolution. Band low dielectric constant which can increase the aperture ratio of TFT-LCD display panel. Advantages of low exposure dose, high sensitivity and high resolution can be provided by applying cationic photo acid generator (PAG) in photo sensitive materials. In this paper, chain breakages were produced by photo chemical reaction between the tert-butyl side chain containing polymer and PAG. The butene produced from chain breakages of methacrylate polymer will become nano-porous which is critical to low dielectric constant in materials. The Montomorillonite(MMT) was use as nano-reactor. PAG were inserted between MMT layers though intercalating reaction. The d-spacing was thus increased. By measuring the changes in d-spacing with X-ray, the intercalating reaction between PAG & MMT was shown. The reaction mechanism of nano-porous formation in photo sensitive materials after UV exposure were studied with EPR. Furthermore, MTEM has been used to observe the amount of nano-porous and the hole size in order to study the interrelation among nano-porous.
This paper describes a low dielectric constant, high resolution and high brightness single layer positive photoresist on TFT array. A currently used positive photoresist comprising of low dielectric constant materials and a chemically amplified resis system is designed for the insulation layer on TFT array to enlarge pixel aperture ration of TFT-LCD.
A nearly perfect single crystal DAST thin film has been grown in this study. The polarized optic microscopy photograph demonstrated an ordered morphology for the surface of this thin film. The FTIR spectrum shoed that the intensities of the characteristic absorption bands for the single crystal thin film were different from that for the crystalline thin film. With 3D luminance image analysis, it was found that the intensity of a guided laser light passing through the single crystal thin film along its a-axis is a little bit stronger than that guided along a standard 8.5/125 μm silica optic fiber. The diameter of the guided light and the space between the two guided lights estimated were about 25 μm and 65 μm, respectively. This study indicates that only the single crystal thin film can be used as a waveguide without further process and is a promising candidate for electro-optic modulators and other active optical devices.
KEYWORDS: Picture Archiving and Communication System, Photoresist materials, Lithography, Scanning electron microscopy, Absorption, Nickel, Semiconducting wafers, Integrated circuits, Very large scale integration, Integrated circuit design
A new photoactive compound (PAC) has been developed for a DQN (Diazonaphtho Quinone Novolak) resist system. The PAC is an esterification product of 1,2-naphthoquinone diazide-5-sulfonyl chloride and 2,3,4,4'-tetrahydroxydiphenylmethane (2344-THDM), which is a hydrogenation product of 2,3,4,4'-tetrahydroxybenzophenone (2344-THBP). The resist formulated from the cresol novolak and PAC exhibited fairly good light absorption and bleaching characteristics in the region of 300-45 nm. The resist performances such as resolution, photospeed, and exposure and defocus latitude in the g-line and i-line steppers are shown, respectively.
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