The surface of freshly prepared porous silicon exists a large number of Si dangling bonds and defects, which act as non-radiative recombination centers leading to an obvious decay of por-Si luminescence efficiency. We choose HNO3 to affect the surface of fresh por-Si intending to improve the luminescence property of porous silicon. The experimental results indicate that the photoluminescence intensity of por-Si samples treated by HNO3 get a four-five times increase and nearly ten days later, the gradually increasing Photoluminescence intensity of these samples become stable. The analysis of XPS and SEM demonstrate that the high oxidization of HNO3 makes more O atoms absorption on the surface, and non-radiative recombination centers decrease in this way. As a result, photoluminescence intensity enhances, and a good stable luminescence of porous silicon is obtained.
The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM).The photoluminescence mechanism for our samples is also discussed.
The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer thermal oxide Si samples doped by La ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the UV light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of La ion dose during ion beam synthesis within a certain limits. Moreover, PL is closely related to the temperature of rapid thermal annealing. Besides, the feature and appearance of the samples was surveyed, with atomic force microscopy. The photoluminescence mechanisms for our samples is also discussed.
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