Mr. Shuhei Shigaki Profile

Shuhei Shigaki

at Nissan Chemical Corp

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 10 April 2024 Presentation

Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, Hyo Seon Suh

Proceedings Volume 12957, 1295702 (2024) https://doi.org/10.1117/12.3010078

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Capillaries, Metal oxides, Liquids, Dry etching, Materials processing

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Proceedings Article | 9 April 2024 Presentation + Paper

Enhancement of sensitivity and resolution by functional surface treatment process and primers (FSTP)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Kodai Kato, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 12957, 1295716 (2024) https://doi.org/10.1117/12.3011014

KEYWORDS: Extreme ultraviolet, Optical lithography, Film thickness, Extreme ultraviolet lithography, Etching, Coating, Chemical vapor deposition, Windows, Surface roughness, Lithography

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Proceedings Article | 22 November 2023 Presentation

Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Kodai Kato, Shuhei Shigaki, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume PC12750, PC1275006 (2023) https://doi.org/10.1117/12.2684973

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Capillaries, Polymers, Metal oxides, Materials processing, Liquids, Dry etching

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Proceedings Article | 22 November 2023 Poster

Functional surface treatment process and primers for extremely enhancing EUVL performance

Taiki Saijo, Yuki Furukawa, Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Makoto Nakajima, Rikimaru Sakamoto, Kodai Kato

Proceedings Volume PC12750, PC127500T (2023) https://doi.org/10.1117/12.2687489

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Chemical vapor deposition, Windows, Tin, Silica, Optical lithography, Lithography, Coating

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Proceedings Article | 1 May 2023 Presentation + Paper

New functional surface treatment process and primers for high-NA EUV lithography

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Kodai Kato, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 12498, 124980O (2023) https://doi.org/10.1117/12.2659979

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Film thickness, Coating, Chemical vapor deposition, Optical lithography, Surface roughness, Monolayers

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Proceedings Article | 12 October 2018 Presentation

Advanced development of organic and inorganic under layers for EUV lithography (Conference Presentation)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Mamoru Tamura, Yasunobu Someya, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10809, 108090Y (2018) https://doi.org/10.1117/12.2503298

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Lithography, Etching, Carbon, System on a chip, Metals

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Proceedings Article | 19 March 2018 Presentation + Paper

DDR process and materials for novel tone reverse technique

Shuhei Shigaki, Wataru Shibayama, Satoshi Takeda, Mamoru Tamura, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10583, 105830M (2018) https://doi.org/10.1117/12.2297517

KEYWORDS: Optical lithography, Materials processing, Extreme ultraviolet lithography, Etching, Lithography, Polymers, Photomasks, Dry etching, Photoresist processing, Extreme ultraviolet

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Proceedings Article | 16 October 2017 Presentation + Paper

DDR process and materials for NTD photo resist in EUV lithography

Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10450, 104500N (2017) https://doi.org/10.1117/12.2280536

KEYWORDS: Etching, Materials processing, Extreme ultraviolet lithography, Polymers, Dry etching, Extreme ultraviolet, Photoresist processing, Optical lithography, Contamination

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We developed the novel process and material which can prevent the pattern collapse issue perfectly. The process was Dry Development Rinse (DDR) process, and the material used in this process was DDR material. DDR material was containing siloxane polymer which could be replaced the space area of the photo resist pattern. And finally, the reversed pattern would be created by dry etching process without any pattern collapse issue. This novel process was useful not only in positive tone development (PTD) process but also in negative tone development (NTD) process. We newly developed DDR material for NTD process. Novel DDR material for NTD consists of special polymer and it used organic solvent system. New DDR materials showed no mixing property for NTD PR, so fine pattern of NTD PR could be filled by DDR materials then tone reverse could be achieved by dry etching process. Tone reverse was successfully achieved by combination of NTD PR and DDR process keeping good pattern quality in EUV lithography. Reversed pattern below hp 14nm was obtained without any pattern collapse issue, which couldn’t be created by just using normal NTD process. Reversed contact hole could be obtained in NTD-DDR process at 24nm hole size. Reversed C/H made by NTD pillar showed good LCDU compared to PTD C/H. In addition, reversed C/H at 20nm hole size could be achieved in NTD-DDR process. In DDR process, enough etch back is important to obtained fine reversed pattern with lower roughness but long etch back time caused degradation of the reversed pattern. Then etch back time was evaluated with NTD PR and DDR material. Reversed C/H showed minimum LCDU when short etch back time was applied, however degradation of LCDU was observed when long etch back was applied. LCDU of reversed C/H made by NTD-DDR process was 3.2nm. On the other hands, LCDU of normal C/H made by PTD process was 3.5nm, so reversed C/H from NTD pillar showed better LCDU than PTD C/H when suitable etch back was applied.

Proceedings Article | 16 October 2017 Presentation

Single-nm resolution techniques with DDR process and materials (Conference Presentation)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10450, 1045019 (2017) https://doi.org/10.1117/12.2280508

KEYWORDS: Optical lithography, Extreme ultraviolet, Etching, Extreme ultraviolet lithography, Photomasks, Materials processing, Carbon, System on a chip, Line width roughness, Contamination

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Proceedings Article | 24 March 2017 Presentation + Paper

Single-nm resolution approach by applying DDRP and DDRM

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10143, 101431H (2017) https://doi.org/10.1117/12.2258180

KEYWORDS: Etching, Optical lithography, Photomasks, Extreme ultraviolet, Silicon, Line width roughness, Line edge roughness, Extreme ultraviolet lithography, Materials processing, Carbon, System on a chip, Lithography

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Proceedings Article | 25 March 2016 Paper

Novel ArF extension technique by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9779, 97791A (2016) https://doi.org/10.1117/12.2219521

KEYWORDS: Lithography, Materials processing, Extreme ultraviolet lithography, Line width roughness, Electroluminescence, Optical lithography, Standards development, Photoresist processing, Etching, System on a chip, Silicon, Immersion lithography, Dry etching

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Proceedings Article | 21 March 2016 Paper

Novel DDR process and materials for front-edge NTD process

Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9779, 97790P (2016) https://doi.org/10.1117/12.2218825

KEYWORDS: Materials processing, Polymers, Image quality, Image processing, Dry etching, Etching, Optical lithography, Photomasks, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Silicon

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Proceedings Article | 18 March 2016 Paper

Approach to hp10nm resolution by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9776, 977609 (2016) https://doi.org/10.1117/12.2219475

KEYWORDS: Optical lithography, Extreme ultraviolet, Etching, Photomasks, Extreme ultraviolet lithography, Materials processing, Carbon, System on a chip, Silicon, Lithography, Dry etching, Line width roughness, Resistance

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Proceedings Article | 20 March 2015 Paper

Dry development rinse (DDR) process and material for ArF/EUV extension technique toward 1Xnm hp and beyond

Shuhei Shigaki, Ryuji Onishi, Rikimaru Sakamoto

Proceedings Volume 9425, 942512 (2015) https://doi.org/10.1117/12.2085742

KEYWORDS: Etching, Photoresist processing, Materials processing, Extreme ultraviolet lithography, Image processing, Dry etching, Lithography, Liquids, Optical lithography, Photomasks

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Since the pattern pitch is getting smaller and smaller, the pattern collapse issue has been getting sever problem in the lithography process. Pattern collapse is one of the main reasons for minimizing of process margin at fine pitch by ArF-immersion or EUV lithography. The possible major cause of pattern collapse is the surface tension of the rinsing liquid and the shrinkage of resist pattern’s surface. These surface tension or shrinkage are occurred in the spin drying process of the rinsing liquid. The influence of surface tension against very small pitch pattern is particularly severe. One of the most effective solution for this problem is thinning of the resist film thickness, however this strategy is reaching to its limits in terms of substrate etching process anymore. Recently the tri-layer resist process or hard mask processes have been used, but there is a limit to the thinning of resist film and there is no essential solution for this problem. On the other hand, dry development process such a supercritical drying method or DSA patterning by dry etching have been known as an ultimate way to suppress the pattern collapse issue. However, these processes are not applied to the mass production process right now because these have some problems such a defect issue, requirement of the special equipment and so on. We newly developed the novel process and material which can prevent the pattern collapse issue perfectly without using any special equipment. The process is Dry Development Rinse process (DDR process), and the material used in the process is Dry Development Rinse material (DDR material). DDR material is containing the special polymer which can replace the exposed and developed part. And finally, the resist pattern is developed by dry etching process without any pattern collapse issue. In this paper, we will discuss the approach for preventing the pattern collapse issue in ArF and EUV lithography process, and propose DDR process and DDR material as the solution.

Proceedings Article | 27 March 2014 Paper

EUV lithography and etching performance enhancement by EUV sensitive Si hard mask (EUV Si-HM) for 1Xnm hp generation

Wataru Shibayama, Shuhei Shigaki, Noriaki Fujitani, Ryuji Onishi, Rikimaru Sakamoto

Proceedings Volume 9051, 905116 (2014) https://doi.org/10.1117/12.2046475

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Roentgenium, Photomasks, Line width roughness, Lithography, Chromophores, Silicon

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Proceedings Article | 1 April 2013 Paper

EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL

Wataru Shibayama, Shuhei Shigaki, Rikimaru Sakamoto, Ryuji Onishi, Hiroaki Yaguchi, Bang Ching Ho

Proceedings Volume 8679, 867914 (2013) https://doi.org/10.1117/12.2011441

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Photomasks, Roentgenium, Silicon, Chromophores, Line width roughness, Photoresist processing

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Proceedings Article | 28 March 2012 Paper

The novel spin-on hard mask and ultrathin UL material for EUVL

Rikimaru Sakamoto, Hiroaki Yaguchi, Syuhei Shigaki, Suguru Sassa, Noriaki Fujitani, Takafumi Endo, Ryuji Onishi, Bang Ching Ho

Proceedings Volume 8325, 832512 (2012) https://doi.org/10.1117/12.916328

KEYWORDS: Extreme ultraviolet lithography, Coating, Polymers, Roentgenium, Lithography, Extreme ultraviolet, Etching, Line width roughness, Photomasks, Silica

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Showing 5 of 17 publications

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