Abstract: We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced
p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the
same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs
based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated
devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base
and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the
integrated device have been obtained.
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