Mr. Shinichi Kanna Profile

Shinichi Kanna

at FUJIFILM Corp

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 26 March 2008 Paper

Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process

Shinji Tarutani, Hideaki Tsubaki, Shinichi Kanna

Proceedings Volume 6923, 69230F (2008) https://doi.org/10.1117/12.771773

KEYWORDS: Polymers, Photoresist processing, Image processing, Double patterning technology, Line width roughness, Photomasks, Polymer thin films, Optical lithography, Second-harmonic generation, Etching

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Proceedings Article | 9 April 2007 Paper

Novel materials design for immersion lithography

Kenji Wada, Shinichi Kanna, Hiromi Kanda

Proceedings Volume 6519, 651908 (2007) https://doi.org/10.1117/12.712096

KEYWORDS: Line width roughness, Polymers, Immersion lithography, Digital watermarking, Thin film coatings, Polymer thin films, Fluorine, Photography, Diffusion, Coating

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Proceedings Article | 11 April 2006 Paper

Materials and process parameters study on ArF immersion defectivity

Shinichi Kanna, Haruki Inabe, Kei Yamamoto, Toshiaki Fukuhara, Shinji Tarutani, Hiromi Kanda, Wada Kenji, Kunihiko Kodama, Koji Shitabatake

Proceedings Volume 6153, 615308 (2006) https://doi.org/10.1117/12.657805

KEYWORDS: Digital watermarking, Polymers, Lithography, Materials processing, Water, Photoresist processing, Silicon films, Scanners, Liquids, Head

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Proceedings Article | 4 May 2005 Paper

Study and control of the interfacial mass transfer of resist components in 193-nm immersion lithography

Shinichi Kanna, Haruki Inabe, Kei Yamamoto, Shinji Tarutani, Hiromi Kanda, Kazuyoshi Mizutani, Kazuyuki Kitada, Seiji Uno, Yasumasa Kawabe

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600490

KEYWORDS: Diffusion, Lithography, Immersion lithography, Polymers, Photoresist processing, Thermodynamics, Control systems, Semiconducting wafers, Molecules, Scanners

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Proceedings Article | 14 May 2004 Paper

Novel transparent PAGs for 193-nm resists

Kunihiko Kodama, Kenichiro Sato, Shiro Tan, Fumiyuki Nishiyama, Tsukasa Yamanaka, Shinichi Kanna, Hyou Takahashi, Yasumasa Kawabe, Makoto Momota, Tadayoshi Kokubo

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.538049

KEYWORDS: Transparency, Line edge roughness, Lithography, Polymers, Deep ultraviolet, Absorption

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Proceedings Article | 12 June 2003 Paper

A HFIPS-based polymer approach for 157-nm single-layer photoresist

Shinichi Kanna, Kazuyoshi Mizutani, Shoichiro Yasunami, Yasumasa Kawabe, Shiro Tan, Morio Yagihara, Tadayoshi Kokubo, Sanjay Malik, Stephanie Dilocker

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485185

KEYWORDS: Polymers, Etching, Transparency, Resistance, Polymer thin films, Lithography, Fluorine, Chemical species, Absorption, Absorbance

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Resist materials for 157nm lithography is believed to be one of the key technology for producing patterns below 70nm. Many different types of fluorine-containing polymer platforms have been energetically pursued by a number of researchers, and some of them appear to be promising in giving a high transparency that has been the essential challenge in realizing this technology. While such highly transparent polymers are the premise in achieving a good imaging, how to get sufficient etch resistance of the polymers can be of another challenge. Actually it is often reported that the etch resistance and the transparency are in trade-off relationship in many cases as a function of fluorine atom content in the polymers. Therefore how to design an etch-resistant polymer while maintaining the good transparency is still a big challenge in developing a practically usable 157nm polymer platform. One of the polymer platforms that the authors believe useful for 157nm is the polymers having hexafluoroisopropanolstyrene (HFIPS) monomer unite in their backbones. The HFIPS unit is attractive because the styrene group provides good etch resistance and hexafluoroisopropanol group (HFIP) provides an acidic molecule while implementing a transparency into the molecule. The lithographic potential of the HFIPS-based polymer system was demonstrated with the fact that a prototype resist from this system was able to print a 75nm line and space 1:1 pairs with an attenuated PSM under 0.60NA stepper exposure. A relatively thin resist thickness, 100nm, was applied due to the limited transparency of the polymer. The patterned exhibited very smooth line edge and a clear pattern definition although a slight T-topping was observed. The results imply that we should be able to achieve a similar lithographic performance with a thicker film (150~200nm), if we can further increase the transparency of the HFIPS-based polymer. The authors are pursuing the approach further aiming at this direction and are getting several new polymers that are more transparent. The paper will present some of the results from later work with such an attempt. The paper will also discuss etch resistance of the HFIPS-based polymer. The etch rates measured for the HFIPS-based polymers were only around 10% faster than standard 248nm resist, which we believe fairly good among various fluorine-containing polymers so far proposed. This was convincing that this polymer system could provide a competitive platform in the practical use. It is generally thought that the etch rate of resist films are mainly affected by their polymer compositions or structures but there are few reported on the influence of the other components in resist formulation. The authors found that the concentration of PAG and quencher influenced both etch rate and resist surface roughness after the etch in this materials system, which implied there are some more room for further etch resistance improvement.

Proceedings Article | 23 June 2000 Paper

Structural design of a new class of acetal polymer for DUV resists

Toru Fujimori, Shiro Tan, Toshiaki Aoai, Fumiyuki Nishiyama, Tsukasa Yamanaka, Makoto Momota, Shinichi Kanna, Yasumasa Kawabe, Morio Yagihara, Tadayoshi Kokubo, Sanjay Malik, Lawrence Ferreira

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388342

KEYWORDS: Polymers, Lithography, Etching, Dry etching, Resistance, Deep ultraviolet, Silicon films, Structural design, Polymer thin films, Photoresist materials

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Showing 5 of 7 publications

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