KEYWORDS: Transistors, Amplifiers, Signal to noise ratio, Resistance, CMOS technology, Capacitors, Analog electronics, Semiconductors, Integrated circuits, Field effect transistors
A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low
voltage devices is crucial for portable devices that require extensive computations in a low power environment. The
LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on
discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input
stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line
regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the
dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power
consumption of this LDO (excluding bandgap reference) is only 80μW.
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