We describe a method of parameters extraction for the lumped element network representing resonant tunneling diodes (RTDs). The method is based on onchip reflection coefficient measurements in a wide frequency range from 1 kHz up to 60 GHz in combination with differential resistance measurements. We have proposed and fabricated double-barrier GaAs/AlAs RTDs embedded into the 50-Ohm coplanar transmission line section, suitable for onchip RF-measurements using a probe station and a vector network analyzer. A good agreement between the experimental S11-parameter curves and the curves calculated from the equivalent lumped network is obtained for various RTD bias voltages. A possible operation of a distributed RTDs as an active microstrip transmission line (MTL) is also discussed. Experimentally extracted parameters of the lumped equivalent network are used to define amplification conditions in MTLs based on distributed RTDs.
Quantum cascade lasers (QCL) are widely adopted as prominent and easy-to-use solid-state sources of terahertz radiation. Yet some applications require generation and detection of very sharp and narrow terahertz-range pulses with a specific spectral composition. We have studied time-resolved light-current (L–I) characteristics of multimode THz QCL operated with a fast ramp of the injection current. Detection of THz pulses was carried out using an NbN superconducting hot-electron bolometer with the time constant of the order of 1 ns while the laser bias current was swept during a single driving pulse. A nonmonotonic behavior of the L–I characteristic with several visually separated subpeaks was found. This behavior is associated with the mode competition in THz QCL cavity, which we confirm by L–I measurements with use of an external Fabry–Perot interferometer for a discrete mode selection. We also have demonstrated the possibility to control the L–I shape with suppression of one of the subpeaks by simply adjusting the off-axis parabolic mirror for optimal optical alignment for one of the laser modes. The developed technique paves the way for rapid characterization of pulsed THz QCLs for further studies of the possibilities of using this approach in remote sensing.
We report on a novel-designed superlattice (SL) InGaAs/InAlAs with artificially introduced epitaxial stresses into functional layers. The optimized and fabricated strained SL demonstrates a sub-picosecond photocarrier lifetime of 1.7 ps nevertheless featuring a rather moderate mobility. By means of numerical simulation we observe a decrease in the energy band gap of strained photoconductive layer InGaAs. In addition, the timedomain spectroscopic measurements reveal an increase in the spectrum amplitude of surface THz emission in the strained SL compared to lattice-matched one. We associate the decrease in photocarrier lifetime as well as the increase in the spectrum amplitude with residual strain in the SL caused by epitaxial stresses. The obtained results are of specific interest to THz science community since they open a way toward fabrication of cost-effective THz photoconductive devices for biomedical applications.
This review highlights recent and novel trends focused on metallic (plasmonic) and dielectric metasurfaces in photoconductive terahertz (THz) devices. We demonstrate the great potential of its applications in the field of THz science and technology, nevertheless indicating some limitations and technological issues. From the state-of-the-art, the metasurfaces are, by far, able to force out previous approaches like photonic crystals and are capable of significantly increasing the performance of contemporary photoconductive devices operating at THz frequencies.
The spectra of mode loss in terahertz quantum cascade laser (THz QCL) with double metal waveguide (DMW) based on Au, Cu and Ag have been analysed. On the basis of measurements of the resistivity of DMW claddings for the temperature range from 4.2 to 300 K, the loss coefficients of THz radiation at Au-, Cu-, Ag-claddings are calculated. We show that the Ag-based DMW allows to reduce the losses by 1.3–7.0 cm-1 in comparison with Au-based DMW at room temperature. Our calculations show that the Ag-based DMW has slightly lower losses (~1 cm-1) than Cu-based DMW at cryogenic temperatures (below 100 K). The use of Cu-based DMW allows to reduce the loss coefficient in comparison with Ag-based DMW at higher temperatures (above 100 K). Temperature dependence of threshold gain for THz QCL with Au-, Cu-, Ag-based DMW are calculated. Taking into account the absorption of THz radiation by free carriers and optical phonons, the spectrum of total mode loss of THz QCL with different thickness of n+-GaAs top contact layer are analyses.
We propose a novel technology for fabricating plasmonic photoconductive antennas (PCAs) based on superlattice (SL) with increased height of the plasmonic gratings up to 100 nm. We passivate the surface of the SL by Si3N4, etch there windows and deposit Ti/Au antenna metallization. The plasmonic gratings are formed by electron-beam lithography with Ti/Au metallization followed by lift-off. Then an Al2O3 anti-reflection coating layer for reduction of the Fresnel reflection losses is used on the top of the plasmonic gratings, which also serves for maintaining its mechanical stability and providing the excitation of guided modes at the resonant wavelengths of the subwavelength slab waveguide formed by the metal gratings. Current-voltage measurements under femtosecond laser illumination reveal strong increase of the transient photocurrent generated by the fabricated plasmonic PCA which is 15 times higher than for conventional one (i.e. without the plasmonic gratings). The obtained terahertz (THz) power spectra demonstrate 100-times increase of the THz power in the plasmonic PCA. The results might be of interest to the needs of THz spectroscopy and imaging systems, in particular, operating with low-power lasers.
We have designed and fabricated terahertz quantum cascade lasers (THz QCLs) with double metal waveguide (DMW) based on three and four-quantum well GaAs/Al0.15Ga0.85As active module with resonant-phonon depopulation scheme. Three-well and four-well THz QCLs have a lasing frequencies of 3.2 THz and 2.3 THz, respectively. We investigate the dependence of threshold current and lasing output power on temperature for fabricated THz QCL. We propose to use DMW based on silver (Ag) for reducing the losses of the waveguide. The spectra of the loss coefficient of the DMW based on Au and Ag are calculated. It is shown, that the use of Ag-based DMW allows to reduce losses by 2-4 cm–1 in comparison with Au-based DMW. Taking into account the absorption of THz radiation by free carriers and optical phonons, the spectrum of total mode losses has a wide minimum in the region of 3-6 THz, which shifts to the highfrequency region of the spectrum with increasing temperature. The postgrowth processing for THz QCL with Ag-Ag DMW are studied.
We have investigated the influence of indium content (x) increase on spectral characteristics of InxGa1-xAs photoconductor. To avoid the mismatch between crystalline parameters of InxGa1-xAs and GaAs wafer we proposed to incorporate a step-graded metamorphic buffer layer. We showed that x increase strongly enhances THz emission and broadens THz spectrum of InxGa1-xAs. Since no polarity rehearsal of the THz waveform occurs and electron diffusion mobility increases up to 90% with x increase we attribute the increase of THz intensity to photo-Dember effect contribution. The maximum efficiency of optical-to-THz conversion was obtained for In0.72Ga0.28 As at optical fluence ~0.01 μJ=cm2. The fabricated photoconductors can be used as promising photo-Dember or lateral photo-Dember THz emitters in pulsed THz spectroscopy and imaging, in particular, operating with long wave optical pump.
One of the promising methods for generating continuous sub-terahertz radiation is the method of photomixing, when the photoconductive material is excited by the emission of two optical continuous lasers with frequencies separated by terahertz frequencies. It should be noted that for effective photomixing the polarization, frequencies and phases of the optical beams introduced into the mixer must be constant, otherwise it is necessary to additionally use a complex system of phase synchronization. In connection with the complexity of such an implementation, variants based on the conversion of single-frequency and broadband laser radiation into two-frequency ones were investigated. The first of these is modulation and consists in the external modulation of single-frequency laser radiation in the electro-optical Mach-Zehnder modulator. The second one is broadband with the allocation of two wavelengths using two rectangular fiber Bragg gratings with a small difference in width. The studies were carried out to create a terahertz photoconductor, the distinguishing feature of which is the use of heterostructures grown on a GaAs substrate in the low-temperature regime as a photoconductive material in the form of a thick gradient layer In(x)Al(1-x)As (x = 0 → 1) with artificially created local deformations and with photoconductive composite InGaAs / InAs / InGaAs quantum wells.
We present the results of numerical and experimental study of the photoconductive antennas (PCAs) based on GaAs and its ternary compounds. We produced three photoconductive materials with different indium content, which then were applied for fabrication of the THz PCAs. These PCAs were used as emitters of the THz pulsed spectrometer. We evaluated the stationary transient current generated by the PCAs, simulated their I-V characteristics, and compared them with the experimental ones. Using the finite integration method, we studied the thermal properties of the PCAs and demonstrated significant influence of the heat-sink on the leakage currents of the InGaAs-based PCA. We showed that the heat-sink reduces the operation temperature of the InGaAs-based PCAs by 40-64 % depending on the indium content. The observed results might be interesting for applications of the PCAs in THz pulsed spectroscopy and imaging.
The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.
Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.
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