2D perovskites have broad technological appeal because of their tunable mechanical, optical, and electrical properties. For flexible optoelectronic applications, it is necessary to determine how mechanical stresses affect their optoelectronic properties. We compare the impact of strain on the photoluminescence (PL) spectra and charge carrier recombination rates of two different 2D perovskite materials, synthesized using either phenethylammonium or butylammonium cations. Both perovskite materials exhibit strong PL enhancement, redshifts of the PL emission wavelength, and longer recombination lifetimes for compressive strains of ≲1%. These results are discussed in relation to the materials’ band structures and trap states.
2D perovskites, consisting of alternating layers of metal halide sheets and cations, tend to be more environmentally robust compared to their bulk 3D counterpart and have broad technological appeal because of their tunable mechanical, optical, and electrical properties. While these materials have promise for flexible optoelectronic applications, it is necessary to determine the impact of strain on the perovskite optical and electronic properties. Here, we discuss our work in understanding how strain modifies the carrier dynamics of 2D perovskites using time resolved spectroscopy. We compare the photoluminescence lifetime of two different 2D perovskite materials, synthesized using either phenethylammonium or butylammonium cations. Both perovskite materials exhibit about a 50% decrease in the lifetime for tensile strains <1%. The decrease in the photoluminescence lifetime, indicating a decrease in the charge carrier lifetime, is discussed in relation the materials defect states and bands
In this work, we are developing a custom-built broadband laser source in the Mid-LWIR range by combining several high power FP-QCLs for a single snap shot application. To minimize temperature variation or reduce the thermal load while the FP-QCL emits at high currents, the FP-QCL was operated in pulsed mode with varying diode temperatures and applied currents. The spectral outputs in pulsed mode were temporally resolved using a step scan FTIR spectrometer. FP mode peaks typically broaden by driving higher currents. FP mode hopping, emerging, and disappearing were observed during the laser pulse length (3000 ns) at different applied current values. The ideal spectral characteristics for a single snap shot application are discussed, with respect to a broad spectral bandwidth, a flat-top power profile, and high spectral power density.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.