Dr. Rob van Vucht Profile

Dr. Rob van Vucht

at FEI Co

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Proceedings Article | 1 May 1994 Paper

Design for a high precision, high accuracy SEM stage for metrology and review

James Jackman, F. Span, H. Tappel, R. van Vucht

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174123

KEYWORDS: Metrology, Scanning electron microscopy, Pattern recognition, Semiconducting wafers, Defect detection, Modal analysis, Computer programming

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Metrology of critical dimensions in an automated fashion requires that stage precision is such that interwafer repeatability be better than approximately 1 micrometers . This limits the need for pattern recognition. Review applications require that the stage can `blind'-navigate to a specific location as a result of an electrical test or defect detection. The extensive use of modal analysis in both the pre-design and test phases has shown the value of this technique, the measured and the pre-calculated resonant (eigen) frequencies being within 5% of each other. We implemented a fully automated mapping procedure that uses pattern recognition techniques to map the encoder errors and global errors relative to a reference wafer. A correction program has been built to provide absolute accuracy results typically of 1.5 micrometers 3 (sigma) with an offset less than 0.2 micrometers over 25 mm (die size) and 2 micrometers 3 (sigma) with a 0.5 micrometers offset for the whole wafer.

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