0.33 NA EUV scanners are being used for High Volume Manufacturing. In this paper we will give an update on the performance improvements of the NXE:3400 systems related to the lithographic performance, productivity and uptime.
Finally we look at future system improvements to meet requirements for the 3 nm node and beyond.
In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime.
We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes.
Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.
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