Mr. Omar Brioso Profile

Omar Brioso

Sr. Applications Engineer at ASML Netherlands BV

SPIE Involvement:

Author

Area of Expertise:

photolithography , semiconductor , optics , lasers

Publications (2)

Proceedings Article | 26 March 2007 Paper

Integration of a new alignment sensor for advanced technology nodes

Paul Hinnen, Jerome Depre, Shinichi Tanaka, Ser-Yong Lim, Omar Brioso, Mir Shahrjerdy, Kazutaka Ishigo, Takuya Kono, Tatsuhiko Higashiki

Proceedings Volume 6520, 652023 (2007) https://doi.org/10.1117/12.712084

KEYWORDS: Optical alignment, Semiconducting wafers, Sensors, Overlay metrology, Manufacturing, Signal processing, Calibration, Lithography, Infrared sensors, Algorithm development

Read Abstract +

In this paper alignment and overlay results of the advanced technology nodes are presented. These results were obtained on specially generated wafers as well as on regular manufacturing-type wafers. For this purpose, a new alignment sensor was integrated and evaluated in three generations of lithography tools, placed in R&D and mass manufacturing facilities. The capability of the sensor to align on marks with varying layout was evaluated. Long term overlay stability less than 11 nm was obtained on two different mark types: a standard ASML calibration mark and a flexible Toshiba mark design. The ability to align on low-contrast marks was validated by a dedicated experiment: typical alignment repeatability values of ~1 nm (3sigma) on shallow etch depth mark features of 25 nm are obtained for various mark designs, including flexible pitch alignment marks. From these results, design directions for improved mark detect ability were defined. The jointly developed mark designs were validated for their alignment robustness by an evaluation of manufacturing wafer alignment performance. On-product overlay results on manufacturing wafers were measured for three different process layers of the current technology node. The used alignment strategies were based on new mark capture and fine wafer alignment mark designs, thereby making optimal use of the mark design flexibility potential of the alignment sensor. Typical on-product overlay values obtained were less than 17 nm for the Active Area process layer, less than 12 nm for the Gate Conductor process layer, and less than 19 nm for the Metal-1 process layer; after applying batch corrections, as determined on a set of 2 send-ahead wafers. All results are based on full batch readout on an offline metrology tool. By applying optimal batch process corrections for linear terms, typical overlay values range between 10-14 nm, depending on the layer measured. Finally the sensor's infrared wavelengths were used to demonstrate a robust alignment solution for wafers containing a semi-transparent hard-mask layer.

Proceedings Article | 6 May 2005 Paper

High-resolution EUV imaging tools for resist exposure and aerial image monitoring

M. Booth, O. Brisco, A. Brunton, J. Cashmore, P Elbourn, G. Elliner, M. Gower, J. Greuters, P. Grunewald, R. Gutierrez, T. Hill, J. Hirsch, L. Kling, N. McEntee, S. Mundair, P. Richards, V. Truffert, I. Wallhead, M. Whitfield, R. Hudyma

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.606715

KEYWORDS: Reticles, Extreme ultraviolet, Objectives, Extreme ultraviolet lithography, Mirrors, Microscopes, Semiconducting wafers, EUV optics, Scintillators, Inspection

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years