The ultraviolet-A (UVA) emitting and the solar-blind photo-detecting device was successfully demonstrated by the ZnGa2O4 oxide layer in a metal-oxide-semiconductor (MOS) structure. The ZnGa2O4 oxide layer was deposited on Si substrate through a facile sol-gel precursor method with optimization of annealing temperatures as a light-emitting and photo-detecting layer. The ITO was deposited by a sputter with a 100 μm stripe pattern for the transparent electrode. It emits the broad UVA light which is attributed to the self-activating ZnGa2O4 and shows an exponential increase and a gradual increase according to the applied voltages and frequencies, respectively. Moreover, it provides a decent response in a photo-detection, especially as a solar-blind photodetector. Finally, we present the UVA photocatalytic effect with an additional TiO2 layer and the photo-detecting response with dark current (Idark) and photocurrent (Iphoto¬) ratio in various conditions.
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