Recently resistive switching (RS) based on ZnO thin film has attracted considerable attention since ZnO with doping can
improve the switching ratio and device performance. In this work, Cu/ZnO/AZO (Al-doped ZnO) and Cu/ZnO:Cu (Cudoped
ZnO) /AZO structures were fabricated for RS, using AZO as bottom electrodes due to its lattice matching with
ZnO, and metal Cu was deposited as the top electrodes. The current-voltage (I-V) characteristics of these RS devices
using different doped ZnO thin films as a dielectric layer were analyzed and compared. The results demonstrated that
ZnO:Cu RS had a higher switching ratio and a larger range of setup and reset voltage than ZnO RS. In addition, we also
found that the high resistance state(HRS)and the low resistance state (LRS) were accordance with space charge
limited current (SCLC) and Ohm’s law respectively. In addition, the effect on RS performance by the top electrode was
investigated by depositing top electrode with different sizes and annealing treatment, and the results indicate that the RS
phenomenon occurred in these Cu/ZnO:Cu/AZO structure devices is caused by bulk effect and interfacial effect
synthetically.
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