KEYWORDS: Perovskite, Crystals, Scanning electron microscopy, Solar cells, Molecules, External quantum efficiency, Absorption, Solar energy, Crystallography, Electron transport
Perovskite has attracted enormous research interest due to the unique advantages, such as high absorption coefficient, great carrier mobility, low exciton binding energy, etc., providing desirable applications in high-performance perovskite solar cells (PSCs). However, the current density-voltage (J-V) hysteresis phenomenon in PSC will reduce the testing accuracy and weaken the actual device performance. In this paper, a facile method based on interfacial engineering is proposed to suppress the hysteresis phenomenon and the deeper physicochemical mechanism is systematically analyzed. By incorporating non-fullerene acceptor Y6 in the crystallization process, a denser and continuous perovskite film with a low-density defect state is obtained, which affords PSC dramatically suppressed the J-V hysteresis with the hysteresis difference decreasing from 13.6% to 1.9% at the maximum power point. Furthermore, scanning electron microscope results and energy dispersive spectrum mappings suggest that ultrathin Y6 film is deposited between the perovskite film and the hydrophobic electron transport layer of PC61BM. The improvement of wettability and matching energy level caused by Y6, render the photocurrent increase and the power conversion efficiency of PSC@Y6 high up to 17.5%. Thus, this work demonstrates that interfacial engineering using small-molecule non-fullerene acceptor is a promising strategy to suppress the J-V hysteresis limiting further PSC commercialization.
Although tin oxide (SnO2) has been employed recently as an efficient electron-transporting layer (ETL) to realize highly efficient perovskite solar cells (PVSCs), it is still quite challenging to apply it through facile solution-based synthesis at low enough temperature to be compatible with the roll-to-roll printing on polymer substrates. In this work, a combustion method has been successfully adapted to modulate the exothermic characteristics and processing temperature (150 °C) of SnO2 to achieve homogeneous and crystalline thin film as efficient ETL for PVSCs. The combustion SNO2 ETL shows high electric conductivity, and matched energy level, which leads to a good power conversion efficiency of 13.76%. This newly developed combustion SnO2 has the high potential to provide a facile pathway to fabricate the low temperature processing, roll-to-roll, and high performance PVSCs.
Transparent light-emitting devices based on organic optoelectronic materials and transparent electrodes can have broad impact on amount of areas including building decoration, smart displays and lighting system. In this work a transparent organic light-emitting device (TOLED) with a large area is demonstrated by using an inverted architecture. A polymer of ploy[(9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)fluorene)] (PFN) is utilized to modify the energy level and morphology between ZnO and organic optoelectronic material. As a result, a brightness of ~1000 cd/m2 is obtained from both sides of the transparent device with a working area of 1 cm2. This work might inspire a promising approach for the fabrication of TOLEDs for both information display and solid-state lighting.
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