Mr. Maxime Bouschet Profile

Maxime Bouschet

at Institut Electrique des Systèmes

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Author

Publications (4)

Proceedings Article | 13 June 2023 Presentation + Paper

Performance analysis of Ga-free T2SL infrared barrier detector

P. Christol, M. Bouschet, M. Tornay, R. Arinero, J. Perez, R. Ferreira, F. Carosella, A. Ramiandrasoa, V. Arounassalame, I. Ribet, N. Péré-Laperne

Proceedings Volume 12534, 125340K (2023) https://doi.org/10.1117/12.2662892

KEYWORDS: Absorption, Quantum efficiency, Mid-IR, Antimony, Quantum confinement, Gallium antimonide, Photodetectors, Dark current, Type II superlattice infrared photodetectors

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Proceedings Article | 17 March 2023 Presentation

Ga-free superlattice nBn structure on Si (100): high performance MWIR Photodetector

Maxime Bouschet, Audrey Gilbert, Jean-Philippe Perez, Laurent Cerutti, Cyril Cervera, Olivier Gravrand, Anthony Ramiandrasoa, Isabelle Ribet, Nicolas Péré-Laperne, Philippe Christol, Jean-Baptiste Rodriguez, Eric Tournié

Proceedings Volume PC12430, PC124300O (2023) https://doi.org/10.1117/12.2649675

KEYWORDS: Spectroscopy, Semiconducting wafers, Readout integrated circuits, Silicon, Mid-IR, Superlattices, Photodetectors, Staring arrays, X-ray diffraction, Molecular beam epitaxy

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Proceedings Article | 12 September 2021 Presentation + Paper

Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector

V. Arounassalame, M. Bouschet, R. Alchaar, A. Ramiandrasoa, S. Bernhardt, C. Bataillon, J.-P. Perez, P. Christol, I. Ribet-Mohamed

Proceedings Volume 11866, 1186606 (2021) https://doi.org/10.1117/12.2598159

KEYWORDS: Quantum efficiency, Absorption, Temperature metrology, Diffusion, Photodetectors, Mid-IR, FT-IR spectroscopy, Sensors, Black bodies, Carrier dynamics, Design and modelling, Electro-optical engineering

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Proceedings Article | 12 September 2021 Presentation + Paper

The need for deep etching to fabricate Ga-free InAs/InAsSb T2SL nBn mid-wave infrared photodetector

Maxime Bouschet, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Jean-Philippe Perez, Nicolas Péré-Laperne, Isabelle Ribet-Mohamed, Philippe Christol

Proceedings Volume 11866, 1186604 (2021) https://doi.org/10.1117/12.2600113

KEYWORDS: Etching, Quantum efficiency, Photodetectors, Diffusion, Sensors, Mid-IR, Electro optics, Staring arrays, Diodes, Gallium antimonide

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