We demonstrate measured radiation detection results from a 50 × 50 μm2 pixel size direct-conversion amorphous selenium (a-Se)/CMOS hybrid detector. We are interested in investigating a monolithic hybrid CMOS detector composed of an a-Se photoconductor thin film integrated on a CMOS active pixel readout array. In this work, we attempt to verify the fabrication process of a-Se as a photoconductive layer for integration with an existing CMOS ASIC. For this initial investigation, the RD53B-ATLAS was used to validate the deposition of a-Se for integration with CMOS technology.
Upgraded particle colliders will require high bandwidth readout capable of withstanding extremely high levels of radiation. Optical links Silicon photonics is a promising solution, but conventional high-speed modulators cannot survive radiation damage. Preliminary results show hardening techniques capable of enduring 1 Grad of total ionizing dose, but without yet demonstrating high speed modulation.
Ring resonator modulators were designed with various radiation hardness by design techniques and irradiated. Most promising is a highly doped ring resonator modulator with an 18 GHz bandwidth that survived 300 MRad of total ionizing dose.
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