Dr. Maria Cristina Rossi Profile

Dr. Maria Cristina Rossi

at Univ degli Studi di Roma Tre

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 22 May 2007 Paper

Defects density and carrier lifetime in nitrogen-doped ultrananocrystalline and polycrystalline diamond films

M. C. Rossi, S. Salvatori, A. Minutello, G. Conte, V. Ralchenko

Proceedings Volume 6591, 65910B (2007) https://doi.org/10.1117/12.722083

KEYWORDS: Nitrogen, Diamond, Carbon, Signal detection, Doping, Pulsed laser operation, Crystals, Nanocrystals, Absorption, Shape analysis

Read Abstract +

The electrical activity of nitrogen related defects are investigated in ultra-nanocrystalline diamond (UNCD) films achieved using different N₂% in the gas phase by transient photocurrent technique at λ = 193 nm, and by steady state photocurrent measurements in the photon energy range 1-6 eV. In undoped UNCD films, spectrally resolved photocurrent measurements reveal a threshold at about 1 eV, related to the absorption of non diamond carbon phases, followed by a monotonic increase by more than one order of magnitude up to about the diamond energy gap, where a steep rise occurs due to band to band transitions. In nitrogen doped UNCD films a clear onset of the spectral photocurrent signal is hardly detectable, although an apparent shift towards higher energies is evidenced, in agreement with a possible nitrogen induced Fermi level shift upward in the band gap. The main N-related feature of the spectra is however a sharp peak at about 4 eV, which is also observed in polycrystalline diamond films grown in a nitrogen rich gas mixture, particularly close to the boundary of the deposition area. On the other hand, photocurrent pulse shape analysis gives carrier lifetime values in the 6-10 ns range, almost independent of nitrogen content. Instead, N-related defects appear mainly responsible for trapping processes, which slow down carrier transport and give rise to long transit times. Such results are discussed in terms of photoionization of N-related defects formed in the non diamond carbon phase.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years