Dr. Marc O. Schillgalies Profile

Dr. Marc O. Schillgalies

VP, Development at First Sensor AG

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Author

Publications (6)

Proceedings Article | 11 March 2010 Paper

Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes

J. Müller, G. Brüderl, M. Schillgalies, A. Breidenassel, S. Tautz, D. Dini, T. Lermer, S. Lutgen, U. Strauß

Proceedings Volume 7602, 760222 (2010) https://doi.org/10.1117/12.842130

KEYWORDS: Indium gallium nitride, Semiconductor lasers, Testing and analysis, Laser damage threshold, Quantum wells, Gallium nitride, Applied physics, Quantum efficiency, Laser applications, Light sources

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Proceedings Article | 12 February 2010 Paper

Progress of blue and green InGaN laser diodes

Stephan Lutgen, Adrian Avramescu, Teresa Lermer, Marc Schillgalies, Desiree Queren, Jens Müller, Dimitri Dini, Andreas Breidenassel, Uwe Strauss

Proceedings Volume 7616, 76160G (2010) https://doi.org/10.1117/12.842131

KEYWORDS: Semiconductor lasers, Continuous wave operation, Indium gallium nitride, Diodes, Gallium nitride, Pulsed laser operation, Laser damage threshold, Electroluminescence, Waveguides, Charged particle optics

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Proceedings Article | 8 May 2008 Paper

Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate

Tobias Meyer, Harald Braun, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 699708 (2008) https://doi.org/10.1117/12.781277

KEYWORDS: Silicon carbide, Gallium nitride, Semiconductor lasers, Laser damage threshold, Quantum wells, Optical simulations, Waveguides, Electroluminescence, Indium gallium nitride, Aluminum

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Proceedings Article | 8 May 2008 Paper

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Harald Braun, Dominik Scholz, Tobias Meyer, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 69971U (2008) https://doi.org/10.1117/12.781314

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Temperature metrology, Modes of laser operation, Near field optics, Near field scanning optical microscopy, Optical simulations, Thermal effects, Superposition

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Proceedings Article | 15 February 2008 Paper

True-blue InGaN laser for pico size projectors

U. Strauβ, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. Schwarz

Proceedings Volume 6894, 689417 (2008) https://doi.org/10.1117/12.761720

KEYWORDS: Indium gallium nitride, Magnesium, Laser damage threshold, Quantum wells, Semiconductor lasers, Luminescence, Reflectivity, Projection systems, Doping, Laser applications

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Proceedings Article | 14 April 2006 Paper

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

U. Schwarz, C. Lauterbach, M. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, V. Härle

Proceedings Volume 6184, 61840K (2006) https://doi.org/10.1117/12.662019

KEYWORDS: Near field scanning optical microscopy, Semiconductor lasers, Indium gallium nitride, Near field, Waveguides, Etching, Oscilloscopes, Waveguide modes, Microscopy, Quantum wells

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Showing 5 of 6 publications

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