Optical stealth technology is very significant in coping with high-sensitivity infrared image detectors and various guided detectors. In recent years, great efforts have been made developing absorbers in the infrared regime. Although these approaches promise distinct advantages in performance enhancement, there are still some problems, such as limitations on sample size and bandwidth. Thus, we proposed an ultra-broadband absorber with metal–insulator–metal three-layer construction by using periodic array of ultra-thin metallic ribbons on top of the silicon oxide layer placed on a metallic reflector. The simulation results demonstrate that the average absorption rate of near 90% is realized by the proposed absorbing structure in 5μm-14μm. Meanwhile, the proposed ultra-broadband absorber is low cost, compact, and large-area processing, which can be flexibly and easily scaled up for mass production via plasma enhanced chemical vapor deposition, magnetron-sputtering deposition, and electron-beam-evaporation deposition.
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