Broadband, all-angle negative refraction (AANR) effects and imaging with subwavelength resolution have been analyzed in a honeycomb lattice of silicon rods in air background, as well as in the inverse structure of air holes in a silicon wafer. In the rod lattice, it was possible to obtain AANR effects for transverse-magnetic (TM) polarization in the second band (TM2) with a bandwidth as large as ∼23% after optimizing the ratio of feature size to the lattice constant as 0.44 and a super-lensing effect with a binary coherent source resolution of 0.68λ. On the other hand, the hole lattice shows AANR for both TM2 (bandwidth of 14%) and TE2 (bandwidth of 15.3%) bands with an additional advantage of polarization-independent AANR of 5% bandwidth. The hole lattice also shows a super-lensing behavior, which helps in imaging with a subwavelength resolution of 0.19λ for a single-point source and 0.80λ with a binary source for TM polarization while it is 0.48λ and 0.97λ, respectively, for transverse-electric (TE) polarization. The conditions for perfect imaging have been studied, and the phenomenon of dual negative refraction for both TE and TM polarization is also discussed.
An enhancement in photonic band-edge-induced absorption and emission from rhodamine-B dye doped polystyrene pseudo gap photonic crystals is studied. The band-edge-induced enhancement in absorption is achieved by selecting the incident angle of the excitation beam so that the absorption spectrum of the emitter overlaps the photonic band edge. The band-edge-induced enhancement in emission, on the other hand, is possible with and without an enhancement in band-edge-induced absorption, depending on the collection angle of emission. Through a simple set of measurements with suitably chosen angles for excitation and emission, we achieve a maximum enhancement of 70% in emission intensity with band-edge-induced effects over and above the intrinsic emission in the case of self-assembled opals. This is a comprehensive effort to interpret tunable lasing in opals as well as to predict the wavelength of lasing arising as a result of band-edge-induced distributed feedback effects.
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