The last few years have shown the success of silicon nitride platforms for ultra-low loss tightly confining waveguides. In addition to the low optical losses, the high Kerr nonlinearity, the high power handling capability and small bending radii makes the platform ideal for nonlinear photonics. Therefore, the potential for applications is huge: LiDAR, microwave optics, quantum photonics, neuromorphic computing, telecommunication, sensors… Here, we present our 200mm platform based on 800nm-thick LPCVD Si3N4 with optical losses below 5dB/m. It is completed with a set of photonic components: grating couplers, edge couplers, MMI, directional couplers, Y-junction and AWG multiplexer, which constitute the building blocks for advanced applications.
Silicon photonic modulators are a key component for electro-optic transmitter within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in Mach-Zehnder interferometer have become the most popular solution. Accumulation–based capacitive modulators are an efficient approach, which can reduce the modulation power consumption. In this work we study the behavior of capacitive modulators with polycrystalline silicon to form the capacitance. The modulators are made within the standard fabrication flow with only few add-ons. In this work we show that furnace annealing conditions and excimer laser annealing conditions during the polycrystalline silicon formation enhance the modulator bandwidths.
We present an optical phased array parameter analysis for automotive and handheld device applications and preliminary results from a 1×16 silicon optical phased array using p-i-n phase shifters built on a 300-mm industrial platform to reach high-speed operation and low power consumption at a 1.55𝜇𝑚 wavelength. Using 2 𝜇𝑚-spaced grating antennas OPA with theoretical beam steering range of 48°, we demonstrate a beam steering range of ±4° while average power consumption after the beam-shape optimization is measured to be 12.6 mW. Experimental setup, beam forming and scanning are discussed and a final analysis on future large-scale OPA integration is made.
A mature silicon photonics platform including various materials for a wide range of functionalities is needed to achieve high-speed and energy-efficient transceivers for Datacom. We present the latest developments of our 200mm silicon photonics platform including new devices in silicon nitride along with active devices. In particular, we demonstrate a high performance SiN Echelle Grating CWDM (de-)multiplexer obtained with advanced photolithography tools, hybrid Si-SiN polarization splitter rotator, SiN edge coupler and low-loss, low-crosstalk Si-SiN and SiN-SiN crossings.
The superior confinement of light provided by the high refractive index contrast in Si/SiO2 waveguides allows the use of sub-micron photonic waveguides. However, when downscaling waveguides to sub-micron dimensions, propagation losses become dominated by sidewall roughness scattering. In a previous study, we have shown that hydrogen annealing after waveguide patterning yielded smooth silicon sidewalls. Our optimized silicon patterning process flow allowed us to reduce the sidewall roughness down to 0.25 nm (1σ) while maintaining rectangular Strip waveguides. As a result, record low optical losses of less than 1 dB/cm were measured at telecom wavelengths for waveguides with dimensions larger than 350 nm. With Rib waveguides, losses are expected to be even lower. However, in this case the Si reflow during the H2 anneal leads to the formation of a foot at the bottom of the structure and to a rounding of its top. A compromise is thus to be found between low losses and conservation of the rectangular shape of the Rib waveguide. This work proposes to investigate the impact of temperature and duration of the H2 anneal on the Rib profile, sidewalls roughness and optical performances. The impact of a Si/SiO2 interface is also studied. The introduction of H2 thermal annealing allows to obtain very low losses of 0.5 dB/cm at 1310 nm wavelength for waveguide dimensions of 300-400 nm, but it comes along an increase of the pattern bottom width of 41%, with a final bottom width of 502 nm.
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