The basic characteristics of group-III nitride films prepared by pulsed sputtering have been investigated. We have found that films prepared by sputtering shows high electron and hole mobilities. We have also found that Heavily donor-doped GaN and AlGaN showed record low resistivity. and were successfully applied to various devices such as the source/drain of AlN/AlGaN HEMTs and tunnel contacts for optical devices.
Longitudinal optical-like phonon resonant mid-infrared emission (LORE) and absorption peaks of micro-surface line and space structures of metallic material plates on GaN wafers are observed at 500 – 630 K. The emission peak energy is located in a range of 670 – 730 cm-1 for GaN, which is lower than the LO-phonon energy of approximately 730 cm-1 at 630 K. This feature is contrasted with that of the LO-phonon resonant emission from the Au-GaAs microstructures resonating with the LO phonon. The emission mechanism is clarified using a structure of n++-GaN with an electron density of 1×1020 cm-3 as a metallic material. These emission lines have another notable feature, i.e., the observed peak energies are independent of the polar emission angle, unlike the emissions by surface phonon polaritons showing a significant directive nature of peak energies. The present results show that each peak energy in the emission spectrum is positioned at the zero-point of the real part of the dielectric function comprising the components of the transverse optical phonon and other electric dipoles induced by the LO-like modes, excluding the target mode. This type of emission is also obtained for the structures of AlxGa1-xN films. These results suggest the feasibility of high-efficiency emission in a range of 670 – 900 cm-1 when the devices are positioned in a cavity with high reflectivity of blackbody-like radiation.
Niobium nitride (NbN) is widely used in single-photon detectors, hot electron bolometer mixers, and superconducting quantum bits. The structural similarity between NbN and III-nitrides offers the possibility that high-quality NbN superconductor thin films can be epitaxially grown on III-nitride devices. However, the characteristics of epitaxial NbN films are still unveiled.
In this presentation, we will discuss the structural and electrical properties of NbN films epitaxially grown on AlN by sputtering. The formation mechanism of NbN twins on AlN will be shown, and techniques to reduce the NbN twin boundaries will be presented.
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