InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by
molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown
by Stranski-Krastanov (S-K) are ~36.8 nm and ~3.1 nm, respectively. The density of QDs is ~2.5×1010 cm-2. The size
distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than
that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were
found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ~159 nm
in length, ~63 nm in width, and ~11 nm in height. A large reduction of volume of InSb structures between those in the
matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also
observed. This may be attributed to As-Sb exchange.
We have grown GaAs quantum dots (QDs) in Al0.3Ga0.7As matrix by droplet epitaxy for application in single photon
sources. This growth method enables the formation of QDs without strain, with emission wavelengths of around 700 nm
within the optimal detection range of cost effective silicon detector, and with reduced surface density of several tens to a
few QDs per μm2 for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and
biexciton emission peaks identified from power dependent and time-resolved micro-photoluminescence (μ-PL)
measurements. The possibility of fabricating photonic crystal (PC) resonator including a single QD was shown by
obtaining precise spectral and spatial information from a few QDs in a mesa structure, utilizing cathodoluminescence
(CL) measurements.
We have tuned the lasing wavelength of a quantum dot laser diode (QDLD) by a thermal treatment. The InGaAs QDLD
structure for 980 nm wavelength applications was grown by molecular beam epitaxy using the Stranski-Krastanov
growth mode. The room temperature photoluminescence (PL) of a QDLD showed the ground state (GS) and excited
state (ES) at the wavelengths at 993 and 946 nm, respectively. The 100 μm-wide and 4 mm-long broad area QDLD
showed the lasing wavelength of 963 nm attributed to the ES of QDs with higher gain. After the thermal treatment at
800 °C for 3 minutes with 300 nm-thick SiO2 capping layers, the PL intensity of the GS increased, which caused the
enhanced GS gain. The enhanced GS gain is thought to the attribution to the decreased carrier trapping due to the
defects quenching. As a result, we could control the lasing wavelength of the QDLD from a wavelength of 963 nm to a
wavelength of 980 nm. Moreover, the performances of these QDLDs have been discussed. This post-growth technique
can be used to enhance the performances of the optoelectronic devices based on quantum dot.
Optically pumped terahertz emission has been observed in a wide range of semiconductors. We show that InAs quantum dots on GaAs can be used to significantly enhance terahertz emission compared with a bare GaAs surface.
We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.
We have investigated the characteristics of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) with Al0.7Ga0.3As cladding layers. The active region of QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 155 and 95 A/cm2 for a 2000 μm-long as-cleaved and a 1500 μm-long HR coated LDs, respectively. The lasing wavelength was 1.31 μm from the ground state transition, under a pulsed operation condition (0.1%) at room temperature. The QDLD showed simultaneous lasing at 1.31 μm and 1.23 μm from the ground state (GS) and the excited state (ES), respectively. The lasing wavelength switching from the GS to the ES depends on the cavity length, the injection current and operating temperature.
In this study, we have studied the thermal treatment effect not only on the optical and structural properties of QDIP structure but also device performance of the QDIP. The thermal treatment of InAs/GaAs QDIP structure have been carried out at the temperature range from 650oC and 850oC with SiO2 capping layer for 1 minute under the N2-gas ambient. After the thermal treatment, the structure was processed to QDIP and its device characteristics such as dark current and IR photo-response were measured. Results show that the photoluminescence (PL) peak was blue-shifted from 1288nm to 1167nm while the peak of photo-currents spectrum was red-shifted from 7.6 um to 7.8 um after the thermal treatment. It is also noted that the thermally treated sample showed the increase of photo-currents, which resulted in the increase of detectivity.
We have investigated the device characteristics of quantum dot infrared photo detector (QDIP) utilizing InAs QDs in an In0.15Ga0.85As quantum well structure. Device characteristics, such as dark current, photoluminescence (PL), and photocurrent spectra, have been measured. Two peak positions were measured at 163 and 219 meV in photocurrent spectrum. The photo-current of the peak at 163 meV was larger than that at 219 meV. The full width at half maximum (FWHM) of the peak at 163 meV was 18 meV, which was attributed to bound-to-bound transition. In0.15Ga0.85As layers were believed to contribute to induce bound-to-bound transition energy (163 meV). The activation energies of electrons in an InGaAs QDs were determined to be 171 meV and 221 meV from temperature-dependent integrated PL intensities. These activation energies from PL measurement are quite well matched to peak IR detection energies of 163 meV and 219 meV from the photo-current spectrum. This result implies that one can estimate the peak IR detection wavelength of QDIP from PL measurements of QDIP structure before its fabrication and measurement.
An improved analysis of low frequency noise in ploy-Si TFT's is proposed in this paper. We present a simple parameter extraction method for 1/f noise sources in poly-Si TFT's based on a comprehensive model for noise generation. The sources for the low frequency noise are identified as the oxide traps in high current regime and the bulk traps in the grain boundary deletion region in low current regime. For high current regime, a simple and useful formula is developed from the Unified Model, which can be used for crystalline Si MOSFET's and SiGe MOSFET's also. For low current regime the bulk trap density in the grain boundary can be extracted utilizing the expression for the noise density considering the thermal activation of carriers from the traps which induces the fluctuations in the barrier height and hence the current noise. The extraction method is successfully applied to the experimental data from the literature with reasonable values for the noise parameters. The concept of mobility in poly-Si TFT's is elucidated. The work can also explain the experimental observation on the barrier height dependence of the low frequency drain current noise in poly-Si TFT's.
Electrical low frequency excess noise or 1/f noise measurements provide strong means to diagnose the quality and reliability of the devices in semiconductor devices. However the exact nature of the noise sources are not clearly understood yet. In this report, existing models for low frequency excess electrical noise in poly-Si thin-film transistors is scrutinized and a new model is proposed, in particular, for large grain poly-crystalline thin-film transistors. Major noise sources are supposed to be located in the grain boundary region and the grain boundary is modeled as two independent Schottky diode connected face-to-face. As the gate bias increases the grain boundary barrier height decreases and the conduction and therefore the noise generation in the grain bulk region becomes important. Therefore, at low gate bias, grain boundary plays important role in conduction and noise generation, and at high bias, the number fluctuation involving the oxide traps leading to flat band fluctuation (unified model for crystalline-Si MOSFET's) will dominate the noise generation. We calculated the critical gate bias (or barrier height) that severs these two different noise generation regimes. Recently reported experimental results are explained with this model.
Influence of quantum dot growth on the electrical properties of Au/GaAs Schottky diode structures containing self-assembled InAs quantum dots fabricated via atomic layer molecular beam epitaxy is investigated. Current-voltage characteristics and low frequency noise measurements were performed and analyzed. Employing four different structures; containing single quantum dot layer, without quantum dot layer for a reference, thicker capping layer with single quantum dot layer, three quantum dot layers, we find the diode containing single quantum dot layer show largest leakage current and all the dots show 1/f behavior in low frequency noise characteristics. Current dependence of the noise current power spectral density shows that all the dots have linear current dependence at low bias which is explained by the mobility and diffusivity fluctuation. The Hooge parameter was determined to be in the range of 10-7 to 10-8. At high bias, the diodes containing quantum dot layer(s) show IFβ dependence with the value of β larger than 2 (3.9, and 2.7), and the diode without quantum dot layer and thicker capping layer show the value of β smaller than 2 (1.6). The deviation of the values of β from two is explained by the random walk of electrons involving interface states at the metal-semiconductor Schottky barrier interface via barrier height modulation. It seems that the growth of quantum dots induces generation of the interface states with its density increasing towards the conduction band edge. The value of β smaller than 2 means that the interface states density is increasing towards the midgap. Typical value of the interface states density was found to be on the order of 1011 to 1012cm2/Vs.
Intermixing effects of MOCVD (metal organic chemical vapor deposition) grown InGaAs SAQDs (self-assembled quantum dots) covered with SiO2 and SiNx-SiO2 dielectric capping layers were investigated. The intermixing of SAQDs was isothermally performed at 700°C by varying annealing time under the N2-gas ambient. It was confirmed from the PL measurement after the thermal annealing that, the emission energy of SAQDs was blue-shifted by 190 meV, the FWHM (full width at half maximum) was narrowed from 76 meV to 47 meV and the PL intensity was increased. SiNx-SiO2 double capping layer have been found to induce larger PL intensity after the thermal annealing of SAQDs compared to SiO2 single capping layer. The results can be implemented for increasing quantum efficiency and tuning the detection wavelength in quantum dot infrared photodetector (QDIP).
Effects of InxGa1-xAs strain relaxation layers on the optical and structural properties of InAs quantum dots (QDs) were studied systemically. 300 K-photoluminescence (PL) shows that PL peak energy of the QDs is blue-shifted in GaAs/InAs QDs/5 nm-thick In0.1Ga0.9As structure compared to GaAs/InAs QDs/GaAs structure. This is attributed to the intermixing of materials between the QDs and the InGaAs layer below the QDs, whereas capping of a 5 nm-thick In0.1Ga0.9As layer leads to red shift due to strain relaxation effect. As thickness of InxGa1-xAs capping layer (TI) increases, 300 K-PL peaks experience red shift below TI < ~7 nm. Unlikely, TI above 7 nm results in blue shift. Considering average height of the QDs is ~ 7 nm, this is attributed to intermixing of material between the QDs and InGaAs capping layers. The blue shift in x = 0.2 over TI > ~7 nm is relatively smaller compared to that in x = 0.1. It is noteworthy that strain difference between the InAs QDs and the InxGa1-xAs is smaller in x = 0.2 rather than in x = 0.1. Finally, InAs QDs are sandwiched by asymmetric thickness (7.5 nm-thick capping InGaAs, 0, 1.2, and 2.5 nm-thick bottom InGaAs) of In0.2Ga0.8As layers. 300 K-PL spectrum shows that 1.2 nm-thick bottom InGaAs leads to the longest wavelength (1306 nm) among this sample set. This is attributed to reduced barrier height and ignorable accumulated strain effect in thin bottom InGaAs layers. In this report, we justify merit of dots in an asymmetric well structure over conventional dots in a symmetric well structure and strain relaxation structure for the control of PL peak energy.
Three types of thin layer were inserted between 1st and 2nd separate confinement heterostructure (SCH) layer of 1.55 μm InGaAaP/InGaAs multi-quantum well (MQW) laser diodes. The three types were Type A (p-InGaAsP, 1x1017/cm3), Type B (p-InGaAsP, 2x1018/cm3), and Type C (p-InP, 2x1018/cm3), respectively. It was shown that the light-current (L-I) characteristics for those three types were similar, while the characteristic temperature (T0) was higher for type B than others.
Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to be most sensitive to the optical intensity variation
1.55 μm multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factor (a-factor) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes whose α-factor is 2 rather than 4. As injection current increased, the FWHM of the far-fields also increased regardless of α-factor. This phenomenon was explained by reduction of filament spacing as injection current increased
In this paper, we propose a new technique to suppress the non- linearity of multiple quantum well (MQW) electro-absorption (EA) modulator, mainly due to an exponential-like transmission characteristics of EA modulator and non-linearity of quantum confined stark effect (QCSE), by intermixing MQW absorption region. Optical properties and its dependence on applied bias voltages of intermixed InGaAs/InGaAsP MQW absorption region, such as transition energy and gain (or absorption) spectrum have been calculated by solving Luttinger-Kohn Hamiltonian. It has been shown that the transfer function of a MQW-EA modulator can be tailored by introducing differently intermixed regions along the waveguide direction. It has been also shown that proposed technique can suppress IMD2 (2nd order intermodulation distortion) by 39.6 dB and enhance spurious free dynamic range (SFDR) by a 3.6 dB by choosing proper combination of interdiffusion lengths and waveguide lengths.
A new model for electrical low frequency noise in semiconductor heterostructure laser diodes is developed based on number fluctuation theory. The model includes carrier number fluctuation mechanisms such as thermal activation, tunneling and random walk involving bulk traps and interface traps at the heterojunction interface. Noise sources in heterostructure semiconductor laser diodes can be divided into three parts, namely, series resistance including ohmic contacts, p-n junction and the heterojunction. The traps located at the interface and or at the bulk of the barrier layer can induce the modulation of barrier height which in turn results in the current fluctuation. Noise generation mechanisms for p-n junction is reviewed. Correlation between electrical and optical noise is also discussed.
The use of microwave semiconductor devices as photodetectors or optically controlled circuit elements have attracted growing interest. We have systematically characterized the optical response of p-channel pseudomorphic MODFET as a function of the drain voltage, gate voltage, and optical power of the illumination. Physical mechanisms responsible for the variation of the device characteristics due to the optical illumination are discussed and analytic models are developed for strong non-linear behavior of the threshold voltage and the photoresponsivity with the optical power of the illumination.
A mixed crystal Sm2+-doped Mg0.5Sr0.5FCl0.5Br0.5 has a high potential in the application for a 3D optical memory. We have observed one-photon persistent spectral hole burning in this material at room temperature. The powder sample of (formula available in paper) was synthesized by firing at 1000 degrees C for 2 hours in a reducing stream of hydrogen. The product was examined with an X-ray diffractometer for the crystalline structure. Fluorescence excitation and emission spectra were recorded with a spectrofluorometer.
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