Stems from the challenge to manufacture advanced semiconductor devices with a Critical Dimension (CD) of 100 nm or even 90 nm, the resolution enhancement lithography assisted by chemical shrink (RELACS) is proposed to increase the resolution of the i-line or KrF lithography. RELACS technology gets rid of the dependence on expensive ArF lithography equipment at 150-90 nm process nodes, and continuously reduces the two-dimensional size of the pattern on the wafer through the interfacial chemical reaction between the shrink materials and the photoresists. Meanwhile, good control of the line edge roughness (LER) after the interface chemical reaction is important for semiconductor mass production, and Hitachi's CD-SEM (CS4800) instrument provides roughness (LER/LWR) measurement technology. RELACS technology offers a new possibility for the development of advanced processes in the semiconductor manufacturing.
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