In this paper, the buffer interlayer was formed by first depositing a pure nickel layer on the p-type Si (100) substrate,
and then the boron nitride thin films were deposited by using radio frequency magnetron sputter. We used the purity of 99.99 % nickel and purity of 99.99 % boron nitride (h-BN) as targets in the experiment. Step profiler has been employed to measure the thickness of nickel interlayer and cubic boron nitride thin films. Fourier transformed infrared spectroscopy (FTIR) has been employed to characterize boron nitride thin films. The content of cubic phase boron nitride in the films has been calculated through the FTIR spectra. The surface morphology and the grain size of films were examined using an atomic force microscope (AFM). The mixture gas of argon and nitrogen was as the working
gas in our experiment. To study the thickness of nickel interlayer how to influence the formation of cubic phase in the boron nitride thin film, we changed the thickness of nickel interlayer by controlling the sputtering time with the same substrate temperature, working gas pressure and other conditions. The results showed that the thickness of nickel
interlayer is the key factor in the formation of cubic boron nitride. The growth of cubic boron nitride at room temperature can be realized by appropriately selecting the thickness of nickel interlayer. We also drew out when the
thickness of nickel interlayer was about 150nm, the content of cubic phase in boron nitride thin films would get up to the highest. On this basis of these results, we also examined impacts of the substrate temperature (100~400 °C), substrate bias (50~210 V) and annealing conditions on the formation of the cubic boron nitride thin films.
Silicon is a kind of excellent semiconductor material and is one of the core material of microelectronics. But it is not a
fine luminescent material. The photoluminescence(PL) will be obtained by excitation only when the size of silicon
partials reduced to a certain value. Nanocrystalline silicon films have special structure and many excellent optoelectronic
properties and are supposed to be applied in optoelectronic devices and large scale integrated circuits. In this paper,
Nanocrystalline silicon films was deposited on silicon substrate by RF magnetron sputtering with pure Si target. And the
working gas is the mixture of oxygen and argon .The content of O2 in working gas (O2/ O2 + Ar) and the power of
sputtering were changed separately .However, the substrate temperature, working gas pressure and other conditions were
definite. After annealing in the stove, we got the Nanocrystalline silicon particles in the thin films. Fourier transform
infrared(FTIR) transmittance measurement was carried out to characterized Nanocrystalline silicon films. X-ray
photoelectron spectroscopy (XPS) measurement was also performed to estimate the atom ratio of the Nanocrystalline
silicon films. Raman scattering measurements was also taken in to characterize the Nanocrystalline silicon films. The
formation of Nanocrystalline silicon filmswere depended partly on the parameters of experiment. The annealed silicon
films were researched that the size of the Nanocrystalline silicon particles proved to be largely impacted by the annealing
temperature in the thin film
In the present study, high quality rubrene thin film is fabricated through control of growth time with thermally
evaporation under vacuum. Optical microscopy is employed to analyze the surface morphology of the samples. A mode
of thin film growth from an amorphous continuous film to polycrystalline rubrene thin film could be controlled by
growth time. Images of such structures [acquired using optical microscopy] show that they are polycrystalline structure,
which splays out from a central point. Rubrene thin film is linear structure when the growth time is greater than 7 hours.
Meanwhile, the optical constant (absorption coefficient (α)) is analyzed by transmission and absorption spectrum. The
optical band gap (Eg) is deduced by Tauc formula. From the ultraviolet absorption spectrum of rubrene thin film, we
observe two shape peaks, which can be explained by Davydov splitting (factor-group splitting).
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.