Mercuric Iodide (HgI2) is a promising semiconductor material for nuclear radiation detectors working at room
temperature, especially for x-ray and γ-ray detectors. The influences of different growth temperatures on qualities of thin
films were studied. The structure and optical properties of thin films were characterized by x-ray diffraction
spectroscopy, metallography and UV-VIS spectrophotometer. Our results can be summarized as following: XRD
analysis shows crystallinity of HgI2 in thin films depends mainly on the growth temperatures, that is, the XRD reflections
become stronger with the decrease of the growth temperature. The optimum growth temperature for preparation of
polycrystalline HgI2 thin film utilizing vertical deposition technique of chemistry is about 20°C. The corresponding thin
film has a good uniformity with thickness of about 800 nm, perpendicular to the substrate along <001> direction. Based
on its optical performance testing, our calculations found that HgI2 thin film grown at 20°C has a wide energy band gap
of about 2.26 eV.
Polycrystalline silicon (p-Si) is well-known as the high-efficency, low-cost, and most ideal material for manufacturing
photovoltaic devices. In recent years, excimer-laser annealing (ELA), metal-induced crystallization (MIC) and solidphase
crystallization (SPC) methods are employed to crystallize amorphous silicon (a-Si). In this paper, a cheap metal
induced crystallization method of fabricating p-Si thin films on an ordinary glass substrate was investigated. In this
synthesis process, a-Si thin film has been deposited onto glass substrates by Plasma Enhanced Chemical Vapor
Deposition (PECVD), and p-Si thin films have been fabricated by aluminium-induced crystallization (AIC) under
nitrogen ambient. The effects of annealing time, annealing temperature on the crystallization of a-Si were investigated by
X-ray diffraction (XRD) technique. Our results indicate that annealing temperature over 300°C is necessary for
crystallization of a-Si which preferred to orientation crystalline Si(111) and this preferred orientation becomes more
obvious as increasing of annealing time and annealing temperature. Meanwhile, the longer annealing time can produce
more a-Si crystallize completely under same aluminium thickness and annealing temperature.
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