Following the development of efficient THz devices operating at 1550 nm based on low temperature (LT) grown semiconductor compounds, the effect of the substrate of such devices in the generated THz radiation is investigated, a new compact, portable and reconfigurable fiber based THz spectrometer is built and a pair of THz devices are evaluated in the spectrometer. The key findings are firstly the transparency of the InP substrate to THz radiation, which implies that the generated THz signal from these devices is not affected by the substrate, and secondly the development of a THz spectrometer at 1550 nm laser excitation, which can be used for high quality measurements for various material sensing and characterization applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.