A new 2 nm rated Nylon filter was developed to have features required for lithography filtration process such as finer pore size, extended contact time for adsorption enhancement and updated cleanliness for faster start-up. The contact time is extended by 1.6 times of the 10 nm rated product in the same sized capsule filter. Finer pore size is achieved and demonstrated by the removal performance of gold nanoparticles. For start-up performance, particles and metal cleanliness were improved.
To validate the features applied for the new 2 nm Nylon filter, on-wafer tests are conducted in comparison to conventional product such as 5 nm Nylon filter. Filter start up performance is tested with KLA Tencor Surfscan SP5XP inspection on solvent spin coated Si wafer. For bridge defects, 40 nm half pitch after development pattern defectivity with ArF immersion lithography is tested. The new 2 nm rated Nylon 6,6 filter performed best for all the tests. Cleanliness probably played a role in start-up performance. Sieving, which is related to filter pore size was effective in resist coating defectivity. And both the finer pore size and hydrophilic adsorption are effective in after development inspection at 40 nm half pitch L/S pattern, which is nearly the theoretical limit of the ArF immersion lithography.
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