We developed a design technique for a photonics-electronics convergence system by using an equivalent circuit of optical devices in an electrical circuit simulator. We used the transfer matrix method to calculate the response of an optical device. This method used physical parameters and dimensions of optical devices as calculation parameters to design a device in the electrical circuit simulator. It also used an intermediate frequency to express the wavelength dependence of optical devices. By using both techniques, we simulated bit error rates and eye diagrams of optical and electrical integrated circuits and calculated influences of device structure change and wavelength shift penalty.
Silicon (Si) photonic wire waveguides provide a compact photonic platform on which passive, dynamic, and active photonic devices can be integrated. This paper describe the demonstrations of several kinds of integrated photonic circuits. The platform consists of Si wire, silicon-rich Si dioxide (SiOx) and Si oxinitride (SiON) waveguides for passive devices and a Si rib waveguide with a p-i-n structure and a germanium (Ge) device formed on Si slab for active devices. One of the key technologies for the photonic integration platform is low temperature fabrication because a back-end process with high temperature may damage active and electronic devices. To overcome this problem, we have developed electron cyclotron resonance chemical vapor deposition as a low-temperature deposition technique. Another key technology is polarization manipulation for reducing polarization dependence. A polarization diversity circuit is fabricated by applying Si wire and SiON integration. The polarization-dependent loss of the diversity circuit is less than 1 dB. Moreover we have developed several kinds of integrated circuit including passive, dynamic and active devices. Ge photodiodes are monolithically integrated with an SiOx-arrayed waveguide grating (AWG). We have confirmed that the operation speed of the integrated Ge photodiode is over 22 Gbps for all 16 channels. Variable optical attenuators (VOAs) fabricated on the Si p-i-n rib waveguides and an AWG based on the SiOx waveguide are integrated successfully. The total size of 16-ch-AWG-VOAs is 15 8 mm2. The device has already been made polarization independent. Furthermore electronic circuits are successfully mounted on the integrated photonic device by using flip-chip bonding.
Silicon photonic wire waveguides, featuring very strong optical confinement and compatibility with silicon electronics,
provide a compact photonic platform on which passive, dynamic, and active photonic devices can be integrated. We have
already developed a low-loss waveguide platform and integrated various photonic devices. For passive devices, we have
developed polarization-independent wavelength filters using a monolithically integrated polarization diversity circuit, in
which waveguide-based polarization manipulation devices are implemented. The polarization-dependent loss of a ring
resonator wavelength filter with polarization diversity is less than 1 dB. For dynamic devices, we have developed
compact carrier-injection-type variable optical attenuators (VOAs). The length of the device is less than one millimeter,
and the response time is nanosecond order. The device has already been made polarization independent. We have
recently monolithically integrated these fast VOAs with low-dark-current germanium photodiodes and achieved
synchronized operation of these devices. For nonlinear devices, a free-carrier extraction structure using a PIN junction
implemented in the waveguide can increase the efficiency of nonlinear functions. For example, in a wavelength
conversion based on the Four-wave-mixing effect, the conversion efficiency can be increased by 6 dB.
We devised a silicon photonic circuit with polarization diversity. The circuit consists of polarization splitters and
rotators. The splitter is based on simple 10-micrometer-long directional couplers. The polarization extinction ratio is 23
dB and excess loss is less than 0.5 dB. The rotator consists of a silicon waveguide embedded in an off-axis siliconoxynitride
waveguide. A 35-micrometer-long rotator gives a rotation angle of more than 72 degrees and excess loss of
about 1 dB. Both devices can be made by using planar fabrication technology and do not require a complex structure
such as three-dimensional forming. Using these devices, we developed a polarization diversity circuit for a ringresonator
wavelength filter. The polarization dependent loss of the filter with polarization diversity is about 1 dB. A 10-
Gbps data transmission with scrambled polarization is demonstrated.
We demonstrate efficient nonlinear functions using silicon nanophotonic structures. In the ultrasmall core of the
waveguides and cavities, nonlinear phenomena are significantly enhanced. Applying the two-photon absorption effect,
we have confirmed all optical modulation, in which the modulation speed is improved to around 50 ps by eliminating
free carriers. Applying the four-wave-mixing effect, we have achieved high-efficiency wavelength conversion. The
conversion efficiency is -11 dB, and the efficiency will be further improved by eliminating free carriers. Using the four-wave-
mixing effect, we have also realized a low-noise entangled photon pair source. The source does not need a
refrigeration system for noise reduction, which is a great advantage for practical application.
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