Mr. Hector Velasco Profile

Hector Velasco

at Beneq Inc.

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 5 March 2022 Presentation + Paper

Study of rotary atomic layer deposition for optical applications

Leif Kochanneck, Andreas Tewes, Gerd-Albert Hoffmann, Kalle Niiranen, John Rönn, Hector Velasco, Sami Sneck, Andreas Wienke, Detlev Ristau

Proceedings Volume 12002, 120020D (2022) https://doi.org/10.1117/12.2612173

KEYWORDS: Atomic layer deposition, Coating, Absorption, Tantalum, Quartz, Refractive index, Plasma, Optical coatings

Read Abstract +

Atomic layer deposition (ALD) has been proven as an excellent method for coating high quality optical films due to its outstanding film quality and precise process control. Unfortunately, batch ALD requires time-consuming purge steps, which lead to low deposition rates and highly time-intensive processes for complex multilayer coatings. Recently, rotary ALD came in focus for optical applications. In this novel process concept, each process step takes place in a separate part of the reactor divided by pressure and nitrogen curtains. The substrates to-be-coated are rotated through these zones. During each rotation, an ALD cycle is completed, thus the deposition rate is mainly dependent on the rotation speed. In this study, the performance of a novel rotary ALD coating tool for optical applications is investigated and characterized with SiO₂ and Ta₂O₅ layers. Low absorption levels of 3.1 ppm for 200 nm thick single layer of Ta₂O₅ and 6.0 ppm for 1032 nm thick single layer of SiO₂ are demonstrated at 1064 nm, respectively, with growth rates up to 0.18 nm/s on fused silica substrates. Furthermore, excellent uniformity is also demonstrated with non-uniformity values reaching as low as 1.55 % and 2.71% for Ta₂O₅ and SiO₂, respectively, over 120 mm on silicon wafers. Seven substrates up to a diameter of 200 mm can be coated in each run. Further investigations on uniformity improvements and multilayer coatings are currently ongoing.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years