The optically stimulated aggregation-induced emission (OS-AIE) technology has the potential to achieve petabit-level capacity based on AIE dye-doped photoresist. Nevertheless, the OS-AIE technology is constrained by its relatively low recording speed. To circumvent the problem, hexaphenylsilole (HPS) was doped into a photoresist film. It was found that there is not a straightforward positive correlation between emission intensity and laser power. When the recording power was 1.2 mW, a notable decrease in fluorescence was observed in the central region of the dot in comparison to the peripheral area. Consequently, this method enables a single beam to rapidly record data comprising 3-bit information, which will facilitate the implementation of OS-AIE data storage.
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