Visible and solar blind UV detector arrays with spectrum below visible light or solar blind avoid
interference from visible light and solar radiation. A candidate for UV detectors is ZnO with a high
bandgap of 3.4 eV. ZnO with combinations of Mg or Cd can be tuned to absorb ultraviolet light from 210
nm to 450 nm. Banpil is developing visible and solar blind photodetectors using ZnO nanowires grown at
temperatures below 400C to facilitate direct ZnO growth on silicon ROICs providing maximum photon
absorption. Potential candidates to combine with ZnO to increase the bandgap potential are MgO and
BeO. Solution methods were developed to grow ZnBeO nanowires and solution methods to overcome
the ZnO wurtzite, MgO cubic and miscibility gap to grow ZnMgO nanowires. Modeling, simulation,
process steps to grow ZnBeO and ZnMgO using electrophoresis and final measurement results are shown
for generating ZnBeO and ZnMgO nanowire solar and visible blind sensors.
Bending efficiency of three-dimensional (3-D) horizontal single- and multiple-slot waveguide microrings are analyzed
using a combination of effective-index and modified transfer-matrix methods. The effects of waveguide parameters,
low-index material, high-index material, asymmetric structure, and asymmetric slots on the bending loss are studied. We
show that the bending efficiency can be enhanced by applying asymmetric structures and asymmetric slots. In addition,
it is demonstrated that the bending loss increases with increasing the number of slots. However, by using proper
thicknesses for different high-index layers of horizontal multiple-slot waveguide, it is possible that horizontal multipleslot
waveguide can provide a lower bending loss than the single-slot one.
This paper presents graphene nanoribbon (GNR) Schottky diode through an analytical approach. To achieve an
analytical relation for channel current, first an analytical equation for potential distribution within the GNR is offered.
Then by using the WKB approximation, transmission probability through Schottky barriers is derived. Finally the
channel current is analytically achieved, which is a function of physical and electrical parameters including gate
insulator thickness, Schottky barrier height, drain bias voltage, gate bias voltage, GNR width, and subband number. To
get a rectification behavior of presented device, two different metals have been considered at the two ends of a p-type
semiconducting GNR resulting in asymmetric contacts. The effect of different parameters such as gate bias voltage,
GNR width, and contact metals on the rectification behavior is investigated. We demonstrate that the rectification
characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage can be tuned through the use of
these parameters. The derived analytical current well describes the rectifying behavior of presented GNR Schottky diode.
Conference Committee Involvement (7)
Nanoepitaxy: Materials and Devices IV
15 August 2012 | San Diego, California, United States
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III
12 August 2012 | San Diego, California, United States
Nanoepitaxy: Materials and Devices III
24 August 2011 | San Diego, California, United States
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
21 August 2011 | San Diego, California, United States
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion
1 August 2010 | San Diego, California, United States
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
1 August 2010 | San Diego, California, United States
Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II
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