Dr. Daisuke Yasufuku Profile

Dr. Daisuke Yasufuku

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Proceedings Article | 27 April 2023 Poster + Paper

Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging

Daiki Sato, Atsushi Koizumi, Haruka Shikano, Shotaro Noda, Yohei Otsuka, Daisuke Yasufuku, Kazumasa Mori, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12496, 1249629 (2023) https://doi.org/10.1117/12.2657032

KEYWORDS: Electron beams, Quantum efficiency, Scanning electron microscopy, Indium gallium nitride, Semiconductors

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An InGaN photocathode with a negative electron affinity (NEA) surface is suitable for industrial use because of features such as a long quantum efficiency lifetime, availability with a visible laser as an excitation light source, and the presence of a transmission-type structure. The first objective is the development of an InGaN photocathode electron gun that can be mounted on a scanning electron microscope (SEM) and the evaluation of the electron beam size at the emission point, maximum emission current, and transverse energy of the electron beam, which are important factors for realizing a high probe current in the SEM. The second objective is the evaluation of emission current stability, while the third objective is the generation of a pulsed electron beam and multi-electron beam from the InGaN photocathode. The parameters of the electron beam from the photocathode electron gun were an emission beam radius of 1 μm, transverse energy of 44 meV, and an emission current of up to 110 μA. Using a high beam current with low transverse energy from the photocathode, a 13 nA probe current with 10 nm SEM resolution was observed with 15 μA emission. At 15 μA, the continuous electron beam emission for 1300 h was confirmed; at 30 μA, the cycle time between the NEA surface reactivations was confirmed to be 90 h with 0.043% stability. Moreover, a 4.4 ns pulsed e-beam with a 4.7 mA beam current was generated, and a 5 × 5 multielectron beam with 12% uniformity was then obtained. The advantages of the InGaN photocathode, such as high electron beam current, low transverse energy, long quantum efficiency lifetime, pulsed electron beam, and multi-electron beam, are useful in industries including semiconductor device inspection tools.

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