We report the photoluminescence enhancement of nc-SiC films by coating nanostructure Ag films and study the
influences of surface plasmon on photoluminescence properties by varying spacer thickness. PL curves of the samples
deposited with different thickness of α-SiNx present two PL peaks which are contributed to the interference in the films
and surface plasmon resonance, respectively. The PL intensity of the sample coated with Ag film is quenched due to
combination of Forster nonradiative process and coherent photonic mode reduction in nc-SiC films, while the PL
intensity of the samples with inserted spacer α-SiNx is enhanced because of the surface plasmon resonance.
Surface photovoltage spectroscopy (SPS) is used to determine the defect states of the nc-Si:H films which are prepared
by using helicon wave plasma-enhanced chemical vapor deposition technique(HWP-CVD) under different substrate
temperature. The films exhibit a 3-phase model, which suggests that nc-Si:H consists of crystalline grains surrounded by
grain boundaries and embedded in an amorphous matrix. SPS measurement indicated that the nc-Si:H films have
additional two types of additional defect states besides the occupied Si dangling bond states D0/Di and the empty Si
dangling states D+ in a-Si, which is attributed to the interface defect states between the nanocrystalline Si grains and the
amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples increases with the
temperature, which may be interpreted as a result of the bonded hydrogen release at the surface of nanocrystalline Si
grains and in the amorphou matrix while increasing substrate temperature.
Silicon carbide thin films are prepared by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio under varying negative DC bias voltage. The structural and optical properties of the deposited films are investigated using Fourier transform infrared spectra (FTIR), ultraviolet-visible (UV-VIS) transmission spectra, and scanning electron microscopy (SEM). It is found that by applying the moderate bias on the substrates to accelerate the energetic ions, nanocrystalline silicon carbide can be deposited at lower onset temperature than without bias, and the crystalline grain size of the films is smaller and more uniform. The mechanism about the enhancing effect of the bias is discussed on the performance of positive ions in the plasma.
Nanocrystalline cubic silicon carbide thin films have been fabricated by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) on Si and Corning 7059 glass substrates using the mix plasma of SiH4, CH4, and H2. The effect of negative radio-frequency (rf) bias voltage on the optical and structural of the deposited hydrogenated nanocrystalline SiC (NC-SiC:H) films has been investigated by Fourier transform infrared (FTIR) spectroscopy, ultraviolet-visible (UVVIS)
transmittance spectroscopy, and photoluminescence (PL) spectroscopy. It is found that with increasing the negative rf substrate bias, the NC-SiC:H thin films become denser and have fewer defects. The PL measurement indicates that all the deposited film present a strong light emission at the room temperature under an excitation of the 370 nm line of a Xe lamp. The blue-green PL peak can be ascribed to quantum confine effect of small size SiC nanocrystal in the film.
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