In this work, an analytical current-voltage (I-V) model of chalcogenide-based devices has been proposed by solving the thermally assisted hopping conduction and energy transfer equations. The subthreshold current and threshold voltage could be predicted by this model. Next, the well-known and experimental linear relationship between threshold voltage and thickness of chalcogenide glass has been deduced from the analytical model directly and the underlying physics of threshold switching is also elaborated according to the model. Besides, the constant-power condition of threshold switching point is also derived from the proposed model. The calculated results from the analytical model agree well with the numerical calculation. The proposed model can help in the design optimization and simulation of nanoscale phase-change memories, relaxation oscillations, and steep slope transistors based on chalcogenide glass materials.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.