Dr. Chih-Wei Lai Profile

Dr. Chih-Wei Lai

Adjunct Professor at Michigan State Univ

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Publications (4)

Proceedings Article | 25 September 2007 Paper

Unifying model for giant enhancement and quenching of light emission from Au/CdSe nanocomposites

Ya-Ping Hsieh, Ji-Wei Chen, Chi-Te Liang, Yang-Fang Chen, Chih-Wei Lai, Pi-Tai Chou

Proceedings Volume 6641, 66411C (2007) https://doi.org/10.1117/12.729228

KEYWORDS: Gold, Surface plasmons, Electrons, Quenching (fluorescence), Nanocomposites, Semiconductors, Metals, Luminescence, Nanoparticles, Nanocrystals

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Proceedings Article | 21 July 2000 Paper

Actinic defect counting statistics over 1-cm2 area of EUVL mask blank

Seongtae Jeong, Chih-wei Lai, Senajith Rekawa, Christopher Walton, Jeffrey Bokor

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390080

KEYWORDS: Inspection, Extreme ultraviolet, Photons, Photomasks, Extreme ultraviolet lithography, Interference (communication), Mirrors, Defect inspection, Scattering, Particles

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Proceedings Article | 21 July 2000 Paper

EUV mask contact layer defect printability and requirement

Pei-yang Yan, Chih-wei Lai, Gregory Cardinale

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390039

KEYWORDS: Photomasks, Opacity, Critical dimension metrology, Extreme ultraviolet, Semiconducting wafers, Process control, Extreme ultraviolet lithography, Printing, Metals, Error analysis

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In this paper, the printability of Extreme ultraviolet (EUV) mask contact layer defects at 90 nm contact size and above is studied via ultra-thin DUV resist and 10X EUV Microstepper. The EUV mask contact defect size requirement is determined by taking into account the wafer process critical dimension (CD) variability. In the experiment, two types of contact mask defect were studied. They are opaque defect placed at both edge and center of a contact and clear defect at edge of a contact. The programmed EUV absorber defect mask was fabricated by subtractive metal patterning on a Mo/Si multilayered-coated silicon wafer substrate. The 10X experimental EUV lithography system with 13.4 nm exposure wavelength and 0.088 NA imaging lens was used to expose the programmed defect mask. The response of the printed resist contact area to the metal absorber mask defect area is measured under different process conditions, i.e., different exposure doses. It is found that the EUV resist contact area responds to the mask defect area linearly for small mask defects. From such a set of contact area change vs. defect area response lines, the allowable absorber mask defect requirement for the contact layer is assessed via statistical explanation of the printable mask defect size, which is tied to the wafer process specifications and the actual wafer process CD controllability. Our results showed that a clear and an opaque intrusion corner absorber mask defect as small as 70 - 80 nm (4X) is printable for 90 nm contacts when 10% contact area change (or 5% contact DC change) due to defect alone is allowed. The effect of an opaque defect at center of a contact is found similar to that of corner opaque defect for smaller defect. It becomes much worse than that of at edges when defect is large. Based on the statistical defect printability analysis method that we have developed, the printable mask defect size can always be re-defined without additional data collection when the process controllability or the process specification changes.

Proceedings Article | 30 December 1999 Paper

Cross-correlation between actinic and visible defect inspection tool for extreme ultraviolet lithography

Seongtae Jeong, Chih-wei Lai, Senajith Rekawa, Christopher Walton, Shon Prisbrey, Jeffrey Bokor

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373375

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Scattering, Photomasks, Sensors, Scanners, Signal detection, Defect inspection, Multilayers

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