Prof. Boris Laikhtman Profile

Prof. Boris Laikhtman

at Hebrew Univ of Jerusalem

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 24 September 2013 Paper

Bipolar THz-lasing structures based on InAs-GaSb coupled quantum wells as an alternative to intersubband lasing

L. Shvartsman, B. Laikhtman

Proceedings Volume 8846, 88460K (2013) https://doi.org/10.1117/12.2024223

KEYWORDS: Phonons, Quantum cascade lasers, Terahertz radiation, Quantum wells, Interfaces, Gallium arsenide, Transition metals, Semiconductor lasers, Optical components, Heterojunctions

Read Abstract +

Proceedings Article | 23 February 2010 Paper

Medical application-oriented nanostructure design: physical basics and limitations

L. Shvartsman, B. Laikhtman

Proceedings Volume 7563, 75630A (2010) https://doi.org/10.1117/12.840983

KEYWORDS: Absorption, Nanoparticles, Gold, Scattering, Particles, Refractive index, Nanostructures, Dielectrics, Metals, Silica

Read Abstract +

Proceedings Article | 6 February 2008 Paper

Can any design support an effective nanostructure lasing for a few THz?

L. Shvartsman, B. Laikhtman

Proceedings Volume 6893, 689304 (2008) https://doi.org/10.1117/12.762282

KEYWORDS: Terahertz radiation, Phonons, Quantum cascade lasers, Chemical elements, Quantum wells, Picosecond phenomena, Nanostructures, Transition metals, Switches, Mid-IR

Read Abstract +

Proceedings Article | 7 March 2006 Paper

Can fundamental gain limitations of nanostructure THz lasers be overcome?

Leonid Shvartsman, Boris Laikhtman

Proceedings Volume 6120, 61200K (2006) https://doi.org/10.1117/12.644068

KEYWORDS: Phonons, Terahertz radiation, Indium arsenide, Interfaces, Quantum wells, Gallium antimonide, Nanostructures, Heterojunctions, Gallium arsenide, Dispersion

Read Abstract +

Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

Read Abstract +

High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 25 March 2005 Paper

THz emitter based on InAs-GaSb coupled quantum wells: new prospects for THz photonics

Boris Laikhtman, Leonid Shvartsman

Proceedings Volume 5727, (2005) https://doi.org/10.1117/12.589827

KEYWORDS: Terahertz radiation, Quantum wells, Gallium antimonide, Indium arsenide, Dispersion, Phonons, Quantum cascade lasers, Scattering, Photonics, Structural design

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years