Dr. Bert Luyssaert Profile

Dr. Bert Luyssaert

at Caeleste

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Proceedings Article | 30 September 2005 Paper

Silicon-on-insulator nanophotonics

Wim Bogaerts, Pieter Dumon, Patrick Jaenen, Johan Wouters, Stephan Beckx, Vincent Wiaux, Dries Van Thourhout, Dirk Taillaert, Bert Luyssaert, Roel Baets

Proceedings Volume 5956, 59560R (2005) https://doi.org/10.1117/12.624493

KEYWORDS: Oxides, Lithography, Refractive index, Resonators, Waveguides, Polarization, Etching, Silicon, Photonic crystals, Nanophotonics

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Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This allows the integration of many functions onto a chip. Silicon-on-insulator (SOI) is an ideal material for nanophotonics. It consists of a thin layer of silicon on top of an oxide buffer. In combination with high-resolution lithography, one can define a high refractive index contrast both in horizontally and vertically, resulting in a tight confinement of light. Moreover, SOI can be processed with industrial tools now used for silicon microelectronics. There are two candidates for nanophotonic waveguides. Photonic wires are basically conventional waveguides with reduced dimensions and a high refractive index contrast. These waveguides with submicron dimensions can have bend radii of only a few micrometres. The alternative is to use photonic crystals, which confine light by the photonic band gap effect. Introducing defects in a photonic crystal creates waveguides and other functional components. To make nanophotonics commercially viably, mass-manufacturing technology is needed. While e-beam lithography delivers the required accuracy for nanophotonic structures, it is too slow. We have used deep-UV lithography, used for advanced CMOS fabrication, to make nanophotonic waveguides. The fabrication quality is very good, which translates to low propagation losses. E.g. a 500nm (single-mode) photonic wire has a propagation loss of only 0.24dB/mm. Using these low-loss waveguides, we have implemented a variety of nanophotonic components, including ring resonators and arrayed waveguide gratings.

Proceedings Article | 20 October 2003 Paper

Large-scale production techniques for photonic nanostructures

Wim Bogaerts, Vincent Wiaux, Pieter Dumon, Dirk Taillaert, Johan Wouters, Stephan Beckx, Joris Van Campenhout, Bert Luyssaert, Dries Van Thourhout, Roel Baets

Proceedings Volume 5225, (2003) https://doi.org/10.1117/12.503665

KEYWORDS: Oxides, Lithography, Deep ultraviolet, Waveguides, Etching, Silicon, Photonic crystals, Photomasks, Nanophotonics, Semiconducting wafers

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Nanophotonic ICs promise to play a major role in the future of opto-electronic signal processing and telecommunications. But for these devices, which consist of large numbers of wavelength-scale photonic components, to be successful, reliable and cost-effective mass-fabrication technology is needed. Photonic components, and among them photonic crystals, require a high degree of accuracy, which translates to low fabrication tolerances. Today, similar demands are made for high-end CMOS components, made of Silicon, for which a large manufacturing base is installed. We demonstrate the fabrication of nanophotonic components, like photonic crystal waveguides and photonic wires, using state-of-the-art CMOS processing tools. The foremost of these is deep UV lithography at 248nm and 193nm, combined with dry-etch processes. To maintain compatibility with standard CMOS processes, we use Silicon-on-Insulator (SOI) as our material system. SOI is transparent at telecom wavelengths and provides a good substrate for high-index contrast optical waveguides. Moreover, recent studies have shown that nanophotonic components in SOI are less sensitive to surface roughness than similar components made in III-V semiconductor. Although deep UV lithography cannot attain the resolution of e-beam lithography, this can be compensated with thorough process characterization, and the technique offers more speed because of its parallel nature. We will illustrate this with experimental results, and will also discuss some of the issues that have arisen in the course of this project.

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