The benefits of using GCIBs for depth profiling of inorganic materials is less clear, due to issues of preferential sputtering still remaining and artefacts being introduced. XPS depth profiles have been recorded for GaAs (100) wafers using GCIBs of varying beam energies and cluster sizes to investigate the effects of different GCIB conditions on the preferential sputtering of As and ion beam induced microtopography. GCIB bombardment of GaAs has also been modelled using the molecular dynamics (MD) code to provide an insight into the effects of using different GCIB conditions for XPS depth profiling of compound semiconductors, such as GaAs
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.