Chemoepitaxial guidance of block copolymer directed self-assembly in thin films is explored using a coarse-grained molecular dynamics model. The underlayers studied are 2× density multiplying line-space patterns composed of repeating highly preferential pinning stripes of various widths separated by larger, more neutral, background regions of various compositions. Decreasing the pinning stripe width or making the background region more neutral is found to increase the line edge roughness (LER) of the lines, but these conditions are found to give the straightest sidewalls for the formed lines. Varying these underlayer properties is found to have minimal effect on linewidth roughness. A larger pinning stripe causes the pinned line (PL) to foot (expand near the substrate), and a preferential background region causes the unpinned line (UPL) to undercut (contract near the substrate). A simple model was developed to predict the optimal conditions to eliminate footing. Using this model, conditions are found that decrease footing of the PL, but these conditions increase undercutting in the UPL. Deformations in either the PL or UPL propagate to the other line. There exists a trade-off between LER and the footing/undercutting, that is, decreasing LER increases footing/undercutting and vice versa.
State-of-the-art directed self-assembly (DSA) of block copolymer (BCP) methods still yield defect densities orders of magnitude higher than is necessary in semiconductor fabrication. The defect free energy of a dislocation pair or jog defect, one of the most common defects found in BCP-DSA, is calculated via thermodynamic integration using a coarse-grained molecular dynamics model as a function of χ and the degree of polymerization (N). It is found that χN is not the best predictor of defect free energy and that a single χN value can yield vastly different free energies when χ and N are different. Defect free energy was highly dependent on defect location relative to the underlayer, and free energy differences ∼100 kT were found among the three possible defect locations on a 1:3 guiding pattern. It was found that increasing molar mass dispersity (Ð) significantly reduced defect free energy. Extrapolating from Ð up to 1.5 suggests that the defect will occur in equal proportions to the defect free state at a Ð of around 1.6 for this system. It was found that long chains tended to concentrate near the defect and stabilize the defect.
State-of-the-art block copolymer (BCP)—directed self-assembly (DSA) methods still yield defect densities orders of magnitude higher than is necessary in semiconductor fabrication despite free-energy calculations that suggest equilibrium defect densities are much lower than is necessary for economic fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that bulk simulations yield an exponential drop in defect heal rate above χN∼30. Thin films show no change in rate associated with the energy barrier below χN∼50, significantly higher than the χN values found previously for self-consistent field theory studies that neglect fluctuations. Above χN∼50, the simulations show an increase in energy barrier scaling with 1/2 to 1/3 of the bulk systems. This is because thin films always begin healing at the free interface or the BCP-underlayer interface, where the increased A−B contact area associated with the transition state is minimized, while the infinitely thick films cannot begin healing at an interface.
Many high χ block copolymer (BCP) systems often have one block which shows a strong preference to wet the free interface at the top of the film. This property makes it difficult to form vertically aligned lamellae which are desired for many directed self-assembly (DSA) applications. To better understand this behavior, simulations of thin films of BCPs were carried out using a coarse-grained molecular dynamics (MD) model. The property that leads one block to preferentially wet the free interface over the other is a difference in cohesive energy density (CED) between the two blocks. Our simulation allows for the systematic variation in the CED of each block to investigate how the magnitude of these differences affects self-assembly behavior. BCPs with no CED differences between the blocks show large ranges of underlayer compositions where vertical lamellae will form that are minimally affected by changing χ of the BCP. The range where vertical lamellae will form can be thought of as a process window. Increasing the CED asymmetry of the BCP (i.e. the difference in CED between blocks) causes a reduction in the process window and also causes a shift in the underlayer composition that is the center of the window. Increasing χ increases the process window for vertical lamellae in CED asymmetric systems. This behavior is determined by the trade-off in energy due to three interfacial interactions: A-B interface, film-free surface interface, and film-underlayer interface. At the limits of very high CED asymmetry and low χ, there may be no underlayer compositions where vertical lamellae will form. A simplified model was also developed that can accurately predict these process windows for different CED asymmetry and χ values on the order of seconds and minutes compared to hours and days for the full simulation.
Chemoepitaxial guidance of block copolymer (BCP) directed self-assembly (DSA) in thin films is explored. The underlayers studied are line-space patterns composed of repeating highly preferential pinning stripes separated by larger, more neutral, background regions. Studies have shown that varying the properties of such a chemical pattern can have a large effect on processing window, but the effect of changing the chemical pattern on many properties of interest such as footing of the BCP are hard to measure experimentally. This study uses a coarse-grained molecular dynamics model to study a 2x density multiplying underlayer by varying the pinning stripe width and background region chemical interactions and analyzing the effect on self-assembled BCP lines. Decreasing pinning stripe width or making the background region more neutral is found to increase the LER of the lines. An undersized pinning stripe width with a neutral background region is found to give the straightest sidewalls for the formed lines, while a larger pinning stripe causes the pinned line to foot (expand near the substrate) and a preferential background region causes the unpinned line to undercut (contract near the substrate). A simple model was developed to predict the optimal conditions to eliminate footing. Using this model, conditions are found that decrease footing of the pinned line but these conditions increase undercutting in the unpinned line. Deformations in either the pinned or unpinned line propagate to the other line. There exists a tradeoff between LER and the footing/undercutting, that is, decreasing LER increases footing/undercutting and vice versa.
Directed self-assembly of block copolymers (BCPs) is a process that has received great interest in the field of nanomanufacturing in the past decade, and great strides towards forming high quality aligned patterns have been made. But state of the art methods still yield defectivities orders of magnitude higher than is necessary in semi-conductor fabrication even though free energy calculations suggest that equilibrium defectivities are much lower than is necessary for economic semi-conductor fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that infinitely thick films yield an exponential drop in defect heal rate above χN ~ 30. Below χN ~ 30, the rate of transport was similar to the rate at which the transition state was reached so that the overall rate changed only slightly. The energy barrier in periodic simulations increased with 0.31 χN on average. Thin film simulations show no change in rate associated with the energy barrier below χN ~ 50, and then show an increase in energy barrier scaling with 0.16χN. Thin film simulations always begin to heal at either the free interface or the BCP-underlayer interface where the increased A-B contact area associated with the transition state will be minimized, while the infinitely thick films must start healing in the bulk where the A-B contact area is increased. It is also found that cooperative chain movement is required for the defect to start healing.
One of the potentially most important issues in accurately modeling directed self-assembly of block copolymers (BCPs) is the fact that the real BCPs often have block energy and/or density asymmetry, meaning that each block has a different homopolymer density and/or cohesive energy density (CED). A simulation of BCP behavior based on molecular dynamics of coarse-grained polymer chains has been developed that can independently parameterize and control the density and the CED of each block to more accurately match this asymmetry. This model was used to study the effect on the order-disorder transition (ODT), domain scaling, and self-assembly of thin films of BCPs. BCPs whose blocks each have a different density show deviations from the mean-field ODT coexistence curve, exhibiting an asymmetric order-disorder transition curve. Self-assembly of thin films of BCPs with mismatches in CED shows significant changes in morphologies compared to BCPs with energetically symmetric blocks, because the lowest CED block has a strong propensity to segregate to and “wet” the free interface. This CED mismatch also gives rise to a large number of deviations from bulk behavior including changing vertical-to-horizontal morphologies through film depth, compression and expansion of domain sizes, and island and hole formations among others.
Implementation of directed self-assembly (DSA) of block copolymers (BCPs) introduces a series of engineering challenges that have not been completely addressed in previous block copolymer and lithography studies. One of the required innovations for further DSA development and implementation is the accurate simulation of specific block copolymer chemistries and their interactions with interfaces. Many of the BCP simulation tools developed so far have limitations or difficulty in terms of matching many of the common issues found in experimental BCP systems such as polydispersity and different statistical segment lengths. One of the potentially most important issues is the fact that real BCPs often have block energy and/or density asymmetry, meaning that each block has a different homopolymer density and/or cohesive energy density (CED). A simulation of BCP behavior and DSA processes based on molecular dynamics (MD) of coarse-grained polymer chains has been developed that can independently parameterize and control the density and CED of each block to more accurately match the asymmetry found in experimental BCPs. This model was used to study the effect of block asymmetry on the order-disorder transition (ODT), domain scaling, and self-assembly of thin films of BCPs. BCPs whose blocks each have a different density show deviations from the mean-field ODT coexistence curve, exhibiting an order-disorder transition or co-existence curve that is asymmetric with shifts and tilts in the direction of majority highest density block. This impact of density and cohesive energy differences diblock copolymers on their phase behavior can explain some of the unexpected shapes found experimentally in BCP ODT curves. Asymmetry in the BCP block energy or density does not appear to have a significant effect on domain scaling behavior compared to the mean-field estimates. Self-assembly of thin films of BCPs with mismatches in CED shows significant deviations in the expected morphologies from ones simulated using equivalent densities and cohesive energy densities. The lowest CED block has a strong propensity to segregate to and “wet” the free interface at the top of the film because it has the lowest energy penalty for the loss of interactions with other chains at the free surface relative to the bulk. This gives rise to an effective “skinning” of the film by the lowest CED block for almost the entire potential range of underlayer compositions and film thicknesses. Such materials will be extremely difficult to successfully pattern transfer for a lithographically useful process because they will not form vertically aligned morphologies through the entire film thickness. This CED mismatch also gives rise to a large number of non-bulk morphologies and deviations from bulk behavior including changing vertical-to-horizontal morphologies through film depth, compression and expansion of domain sizes to match film thickness dimensions, and island and hole formation among others. Increasing the χN value can potentially suppress some of these non-idealities due to CED asymmetry, but the required χN to overcome these issues will differ from polymer to polymer depending on the magnitude of the CED asymmetry.
Pattern density multiplication using directed self-assembly (DSA) of block copolymers (BCPs) is a technique capable of
producing patterns with small pitches utilizing guiding template patterns printed as larger feature sizes and pitches. One
method for achieving this density multiplication is to utilize chemoepitaxy based on a guiding underlayer that is
nominally topographically flat but which is composed of a pinning region, or stripe if referring to lamellae, which will
chemically prefer one microphase of the BCP, as well as a second region that is often referred to as “neutral” to both
phases of the BCP. In most conceptions of such a chemoepitaxial approach for alignment of lamellae patterns, the
pinning stripe is typically the width of a single lamellae of the phase separated BCP, while the neutral stripe is some odd
number of lamellae widths. In this work, detailed simulation studies have been performed to elucidate the effects of
variables such as guiding stripe size, chemical composition of the neutral stripes, and small topography on the process
window of DSA pitch sub-division patterning processes. A simple but novel technique has been developed and utilized
to quantify the level of alignment of a simulated BCP film to an underlying guiding pattern. Such process windows and
lithographic parameters have been studied for different pitch sub-division conditions including 1:3 and 1:5 pinning
stripe:neutral stripe width ratios. It is found that the center of the processing window occurs at a composition of the
“neutral stripe” such that it is slightly to somewhat strongly preferential to the type of polymer of opposite type to that
attracted by the pinning stripe, and that this ideal “neutral stripe” composition becomes more neutral as the density
multiplication increases.
Chemoepitaxy is often used to induce pattern density multiplication in the directed self-assembly (DSA) of block
copolymers (BCPs) by using a chemically patterned guiding underlayer. This underlayer is often viewed as being a flat
underlayer composed of a pinning stripe region and a neutral stripe region, where the pinning stripe is a region highly
preferential to one phase of the BCP and the neutral stripe is a region that is slightly preferential to the other phase of the
BCP that is not attracted by the pinning stripe. However, in producing these chemoepitaxial patterns, it is likely that
unexpected topography might be introduced into the system, which may adversely affect the ability for the underlayer to
guide the phase separation of the BCP film, and may deform any resulting lamellae. The current work presented in this
paper explores the effect that topography in these chemoepitaxial underlayers has on the alignment of the BCP film.
These underlayer effects have been evaluated using detailed mesoscale molecular dynamics simulations.
KEYWORDS: Polymers, Thermodynamics, Systems modeling, Monte Carlo methods, System integration, Molecular interactions, Semiconductors, Motion models, Polymerization, Directed self assembly
Directed self-assembly (DSA) of block copolymers (BCPs) is a promising method for producing the sub-20nm features
required for future semiconductor device scaling, but many questions still surround the issue of defect levels in DSA
processes. Knowledge of the free energy associated with a defect is critical to estimating the limiting equilibrium defect
density that may be achievable in such a process. In this work, a coarse grained molecular dynamics (MD) model is used
to study the free energy of a dislocation pair defect via thermodynamic integration. MD models with realistic potentials
allow for more accurate simulations of the inherent polymer behavior without the need to guess modes of molecular
movement and without oversimplifying atomic interactions. The free energy of such a defect as a function of the Flory-
Huggins parameter (χ) and the total degree of polymerization (N) for the block copolymer is also calculated. It is found
that high pitch multiplying underlayers do not show significant decreases in defect free energy relative to a simple pitch
doubling underlayer. It is also found that χN is not the best descriptor for correlating defect free energy since
simultaneous variation in chain length (N) and χ value while maintaining a constant χN product produces significantly
different defect free energies. Instead, the defect free energy seems to be directly correlated to the χ value of the diblock
copolymer used. This means that as higher χ systems are produced and utilized for DSA, the limiting defect level will
likely decrease even though DSA processes may still operate at similar χN values to achieve ever smaller feature sizes.
A 10% batch-to-batch variation in molecular weight for a low polydispersity block copolymer (BCP) used for DSA
lithography could result in more than a 6% change in critical dimension (CD). Therefore, there is a strong motivation
and need to develop and understand methods for fine-tuning the domain size of DSA BCPs to meet the CD and pitch
specifications that will be required for practical implementation of DSA processes. This study investigates two methods
of fine-tuning the domain size of a specific batch of BCP through blending of the BCP with another polymer, either 1. a
set of similar homopolymers (HPs) or 2. a similar BCP of different molecular weight. Each method was investigated and
compared using a coarse grained molecular dynamics simulation. For BCP-HP blends, the domain size increases as the
amount of HP increases because the HPs tend to slightly swell the BCP domains. A design heuristic was developed for
guiding the determination of how much HP to add to obtain a desired pitch. For blends of different molecular weight
BCPs, two different scaling regimes were identified; one regime is majority large chains and the other regime is majority
small chains. Based on the simulation results, the domain scaling can be mapped across the full range of blends by
simply measuring three points: the pure small chain domain size, the pure large chain domain size, and a 50/50 blend of
the small and large chains. Comparing the two different blending methodologies, BCP blending with other BCPs is a
more versatile approach because it can be used to either increase or decrease the domain size of a base BCP while HP
blending can only increase the domain size. HP blending is also potentially problematic because the HPs tends to
aggregate in the middle of each block’s half domain which can have a significant effect on CD uniformity due to the
strong effect of local variations in the concentration of the HP and local variations in HP conformation. The use of BCP
blends with other BCPs should be more favorable from a CD uniformity perspective because this approach is much less
susceptible to initial local fluctuations than HP blends because all BCPs go to the A-B interface. The coarse grained
molecular dynamics simulation is well suited for comparisons such as this and can produce design rules that are needed for experimental implementation of polymer blending with BCPs to tune domain size.
A model has been developed for the simulation of block copolymer (BCP) directed self-assembly (DSA) based on a
coarse grained polymer model that anneals using molecular dynamics. The model uses graphics processing units (GPUs)
to perform the calculations; this combined with the coarse graining means simulations times approach the speed of other
more commonly used simulation techniques for BCPs. The model is unique in how it treats the pure phase blocks
interactions with themselves (i.e. A-A and B-B interactions) and their interactions with each other. This allows for
simulations that can potentially more accurately capture the differences between the properties of each block such as
density and cohesive energy. The model is fully described and used to examine some of the issues that are unique to
DSA lithographic applications of BCPs. We describe a method to calculate χ for the off-lattice MD system based on
observation of the order-disorder transitions (ODT) for different degrees of polymerization N. The model is used to
examine the transient, complex, non-classical morphologies that can occur through film thickness during a DSA process.
During the phase separation process from a mixed initial state, the BCPs first locally phase separate to form small
aggregate type structures. These aggregates then coalesce into larger features that approach the size of the equilibrium
domain. These features then shift to match the guiding pattern on the underlayer followed by the slow elimination of
defects. We also studied how the guiding patterns work in chemo-epitaxy DSA. The guiding patterns have a strong
immediate effect on the BCP film nearest the interface and induce locally aligned self-assembly. Over time, this induced
pattern tends to propagate up through the thickness of the film until the film is uniformly aligned to the guiding pattern. We also clearly see that the observed morphology at the top of the film gives no indication of the morphology through the depth, especially during the transient portions of the self-assembly process.
Directed self-assembly (DSA) of block copolymers (BCP) could enable high resolution patterning beyond the
capabilities of current optical lithography methods via pitch multiplication from lower resolution primary lithographic
patterns. For example, DSA could enable dense feature production with pitches less than 80 nm from patterns generated
using 193 nm exposure tools without the need for double patterning or other schemes. According to theory, microphase
separation of diblock copolymers occurs when the critical condition that χN>10.5 is met while the pitch of the resulting
polymer features scale as ~N2/3, where χ is the Flory Huggins interaction parameter and N is the total degree of
polymerization for the diblock copolymer. In order to generate patterns with smaller pitches, N must be decreased while
maintaining a χN>10.5 to allow for phase separation. This requires utilization of polymers with higher χ values as N is decreased. Current materials, such as PS-b-PMMA, exhibit a relatively low χ value of ~0.04, which limits the practical pitch of DSA line-space patterns produced using PS-b-PMMA to approximately 20 nm. In this paper, we investigate alternative materials, namely poly(styrene)-b-poly(hydroxystyrene) (PS-b-PHOST), which exhibits a high χ value via hydrogen bonding interactions that can allow for production of sub-20nm pitch DSA patterns. In order to utilize any diblock copolymer for DSA, a neutral underlayer and a method for annealing the block copolymer are required. Here, a random copolymer, poly(styrene-co-hydroxystyrene-co-glycidyl methacrylate), is developed and reported for use as a neutral underlayer for PS-b-PHOST. Furthermore, a solvent annealing method for PS-b-PHOST is developed and
optimized using ethyl acetate to allow for uniform microphase separation of PS-b-PHOST.
This paper addresses two fundamental issues: (1) the connection between block copolymer polydispersity (as
measured by a polydisperisty index (PDI)) and pattern LER/ LWR limits and (2) the connection between block
copolymer χN value and pattern LER/LWR limits. In this work, we have used coarse grained molecular dynamics
(MD) simulations of BCP DSA to study the effect of block copolymer PDI on DSA properties including LER/LWR
and patterning capability. It is observed that as PDI increases from 1 to values of ~1.3, there is little effect on pattern
LER/LWR, and as PDI increases above ~1.3 the LER/LWR increases slowly with increasing PDI. This suggests
that LER/LWR concerns are not a major determinant in terms of specifying block copolymer PDI requirements for
DSA processes. Concerning χN and LER/LWR, there is a sharp increase in roughness for χN<30. Because of the sharp increase at such low χN values, it is unlikely that BCP DSA processes for semiconductor manufacturing will be able to operate at low χN values even though microphase separation still occurs at these low χN values.
Directed self-assembly (DSA) of block copolymers is a promising technique for producing sub-30 nm pitch regular
patterns, and the development of these DSA techniques could benefit greatly from computer simulation of such methods. Current simulation methods such as mean field approaches suffer from a number of limitations that affect their accuracy and their level of detail. In this work a simulation approach based on the use of Protracted Colored Noise Dynamics (PCND) with coarse grained mesoscale polymer models based on statistical segment beads has been developed and studied. It has been shown that using PCND allows simulations to reach an equilibrium state at least 35 times faster than without PCND.
Directed self assembly (DSA) of block copolymers (BCP) could enable high resolution secondary patterning via pitch
multiplication from lower resolution primary lithographic patterns. For example, DSA could enable dense feature production at
pitches less than 20 nm from patterns generated using 193 nm exposure tools. According to theory, microphase separation of
block copolymers can only occur when the critical condition that χN>10.5 is met, where χ is the Flory Huggins interaction parameter and N is the total degree of polymerization for the block copolymer. In order to generate smaller DSA pattern pitches, the degree of polymerization of the block copolymer is reduced since this reduces the characteristic length scale for the polymer (e.g. radius of gyration). Thus, as N is reduced, the effect of this reduction on χN must be balanced by increasing χ to maintain a given level of phase separation. Currently, most DSA work has focused on the use of poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) copolymers whose low χ value (i.e. ~0.04) limits the practical DSA pitch using such materials to approximately 20nm. The general goal of this work has been to explore new higher χ block copolymer systems, develop DSA patterning schemes based on such materials, and test their ultimate pitch resolution. This paper discusses the synthesis and characterization of poly(styrene)-b-poly(hydroxystyrene) (PS-b-PHOST) copolymers made via nitroxide mediated radical polymerization. The formation of lamellar fingerprint structures in PS-b-PHOST using solvent annealing is demonstrated. Using this fingerprint data, initial estimates of χ for PS-b-PHOST are made which show that it appears to be at least one order of magnitude larger than the χ for PS-b-PMMA . Finally, graphoepitaxy of self-assembled lamellar structures in PS-b-PHOST is demonstrated using SU-8 guiding patterns on cross-linked neutral underlayers.
Directed self-assembly (DSA) of block copolymers is a promising technology for extending the patterning capability of
current lithographic exposure tools. For example, production of sub-40 nm pitch features using 193nm exposure
technologies is conceivably possible using DSA methods without relying on time consuming, challenging, and
expensive multiple patterning schemes. Significant recent work has focused on demonstration of the ability to produce
large areas of regular grating structures with low numbers of defects using self-assembly of poly(styrene)-b-poly(methyl
methacrylate) copolymers (PS-b-PMMA). While these recent results are promising and have shown the ability to print
pitches approaching 20 nm using DSA, the ability to advance to even smaller pitches will be dependent upon the ability
to develop new block copolymers with higher χ values and the associated alignment and block removal processes
required to achieve successful DSA with these new materials. This paper reports on work focused on identifying higher
χ block copolymers and their associated DSA processes for sub-20 nm pitch patterning. In this work, DSA using
polystyrene-b-polyacid materials has been explored. Specifically, it is shown that poly(styrene)-b-poly(acrylic acid)
copolymers (PS-b-PAA) is one promising material for achieving substantially smaller pitch patterns than those possible
with PS-b-PMMA while still utilizing simple hydrocarbon polymers. In fact, it is anticipated that much of the learning
that has been done with the PS-b-PMMA system, such as development of highly selective plasma etch block removal
procedures, can be directly leveraged or transferred to the PS-b-PAA system. Acetone vapor annealing of PS-b-PAA
(Mw=16,000 g/mol with 50:50 mole ratio of PS:PAA) and its self-assembly into a lamellar morphology is demonstrated
to generate a pattern pitch size (L0) of 21 nm. The χ value for PS-b-PAA was estimated from fingerprint pattern pitch
data to be approximately 0.18 which is roughly 4.5 times greater than the χ for PS-b-PMMA (χPS-b-PMMA ~ 0.04).
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