Poster
10 April 2024 Impact of process parameters on grayscale MEEF
Ujwol Palanchoke, Florian Tomaso, Yorrick Exbrayat, Gaby Bélot, Marie-Line Pourteau, Ivanie Mendes, Juline Saugnier, Aurélien Fay, Sébastien Bérard-Bergery, Elodie Sungauer, Charlotte Beylier, Rémi Coquand, Arthur Bernadac
Author Affiliations +
Conference Poster
Abstract
Optical grayscale lithography offers the possibility to pattern 3D microstructures at large scale and high throughput for HVM semiconductor industry [1-4]. 3D structures uniformity is of importance to ensure homogeneous and at-best performances of several tens of millions of functional elements. This uniformity can be impacted in part by the optical mask variability. Impact of mask variability can be quantified in terms of Mask Error Enhancement Factor (MEEF) [5] for optical grayscale lithography which can be calculated by using resist contrast curve. It has been shown that MEEF is highly dependent on mask densities [5]. Once the mask is fabricated, the impact of mask variabilities on lithography can be controlled by process optimization. In this paper we evaluate the impact of process parameters on optical grayscale MEEF by theoretical and experimental means.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Ujwol Palanchoke, Florian Tomaso, Yorrick Exbrayat, Gaby Bélot, Marie-Line Pourteau, Ivanie Mendes, Juline Saugnier, Aurélien Fay, Sébastien Bérard-Bergery, Elodie Sungauer, Charlotte Beylier, Rémi Coquand, and Arthur Bernadac "Impact of process parameters on grayscale MEEF", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC129560Y (10 April 2024); https://doi.org/10.1117/12.3010850
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KEYWORDS
3D mask effects

Grayscale lithography

3D modeling

3D acquisition

3D microstructuring

Data modeling

Photoresist processing

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