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Nanoimprint lithography (NIL) is considered to be a sustainable technology for fabricating fine patterns and 3D structure of semiconductor devices. In this paper, we report preliminary results of device qualification for dual damascene structure fabricated by NIL. We have optimized NIL conditions to improve defectivity and overlay accuracy, and etching condition to improve fidelity and uniformity of 3D shape on the entire wafer. The 1st electrical characteristic results confirm the possibilities of one step fabrication of 3D dual damascene structure using NIL
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